HOLE CONFINEMENT EFFECTS ON MULTIPLE SI DELTA-DOPING IN GAAS

dc.creatorSHIBLI, SM
dc.creatorSCOLFARO, LMR
dc.creatorLEITE, JR
dc.creatorMENDONCA, CAC
dc.creatorPLENTZ, F
dc.creatorMENESES, EA
dc.date1992
dc.date39600
dc.date2014-12-16T11:33:53Z
dc.date2015-11-26T17:01:23Z
dc.date2014-12-16T11:33:53Z
dc.date2015-11-26T17:01:23Z
dc.date.accessioned2018-03-28T23:49:13Z
dc.date.available2018-03-28T23:49:13Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 60, n. 23, n. 2895, n. 2896, 1992.
dc.identifier0003-6951
dc.identifierWOS:A1992HX46600025
dc.identifier10.1063/1.106811
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/69588
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/69588
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/69588
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1278705
dc.descriptionThe observation of quantum-confined optical transitions in multiple-delta-doping in GaAs, grown by molecular beam epitaxy, is reported. Doping efficiency and carrier confinement are investigated by Hall and photoluminescence measurements. Hall measurement results for multiple-delta-doped samples show a dramatic enhancement of carrier concentrations compared to the uniform doping case. From photoluminescence spectra we observed that the cutoff energy is significantly affected by the spacing between the dopant sheets. The strong localization of confined photoexcited holes in the spacing layers of these structures plays a fundamental role in the interpretation of the optical data.
dc.description60
dc.description23
dc.description2895
dc.description2896
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherWoodbury
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectMolecular-beam Epitaxy
dc.subjectDoped Gaas
dc.subjectLayer
dc.titleHOLE CONFINEMENT EFFECTS ON MULTIPLE SI DELTA-DOPING IN GAAS
dc.typeArtículos de revistas


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