Artículos de revistas
Magnetoabsorption spectra of intraexcitonic transitions in GaAs-(Ga,Al)As semiconductor quantum wells
Registro en:
Journal Of Applied Physics. Amer Inst Physics, v. 92, n. 3, n. 1227, n. 1231, 2002.
0021-8979
WOS:000176907700010
10.1063/1.1489495
Autor
Barticevic, Z
Pacheco, M
Duque, CA
Oliveira, LE
Institución
Resumen
We present a theoretical study, within the effective-mass approximation, of the magnetoabsorption spectra of intraexcitonic terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells. The semiconductor quantum wells are studied under magnetic fields applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by an expansion of the exciton-envelope wave functions in terms of products of hole and electron quantum-well states with appropriate Gaussian functions for the various excitonic states. Intramagnetoexciton transitions are theoretically studied by exciting the allowed excitonic transitions with sigma(+) (or sigma(-)) far-infrared radiation circularly polarized in the plane of the GaAs-(Ga,Al)As quantum well. Theoretical results are obtained for the intramagnetoexciton transition energies and magneto-absorption spectra associated with excitations from 1s-like to 2p(+/-), and 3p(+/-)-like magnetoexciton states, and found in overall agreement with optically detected resonance measurements. (C) 2002 American Institute of Physics. 92 3 1227 1231