| dc.creator | INOKI, CK | |
| dc.creator | LEMOS, V | |
| dc.creator | CERDEIRA, F | |
| dc.creator | VASQUEZLOPEZ, C | |
| dc.date | 1993 | |
| dc.date | APR 1 | |
| dc.date | 2014-12-16T11:33:33Z | |
| dc.date | 2015-11-26T16:59:35Z | |
| dc.date | 2014-12-16T11:33:33Z | |
| dc.date | 2015-11-26T16:59:35Z | |
| dc.date.accessioned | 2018-03-28T23:47:15Z | |
| dc.date.available | 2018-03-28T23:47:15Z | |
| dc.identifier | Journal Of Applied Physics. Amer Inst Physics, v. 73, n. 7, n. 3266, n. 3270, 1993. | |
| dc.identifier | 0021-8979 | |
| dc.identifier | WOS:A1993KV03100021 | |
| dc.identifier | 10.1063/1.352973 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/75147 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/75147 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/75147 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1278228 | |
| dc.description | A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained-layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E1 + DELTA1 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination. | |
| dc.description | 73 | |
| dc.description | 7 | |
| dc.description | 3266 | |
| dc.description | 3270 | |
| dc.language | en | |
| dc.publisher | Amer Inst Physics | |
| dc.publisher | Woodbury | |
| dc.relation | Journal Of Applied Physics | |
| dc.relation | J. Appl. Phys. | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Multiple Quantum Wells | |
| dc.subject | Gaas | |
| dc.subject | Photoreflectance | |
| dc.subject | Raman | |
| dc.subject | Spectroscopy | |
| dc.subject | Transitions | |
| dc.subject | States | |
| dc.title | STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE | |
| dc.type | Artículos de revistas | |
