dc.creatorFernandes, IL
dc.creatorCabrera, GG
dc.date2013
dc.dateDEC
dc.date2014-08-01T18:43:05Z
dc.date2015-11-26T16:58:24Z
dc.date2014-08-01T18:43:05Z
dc.date2015-11-26T16:58:24Z
dc.date.accessioned2018-03-28T23:46:00Z
dc.date.available2018-03-28T23:46:00Z
dc.identifierIeee Transactions On Magnetics. Ieee-inst Electrical Electronics Engineers Inc, v. 49, n. 12, n. 5635, n. 5638, 2013.
dc.identifier0018-9464
dc.identifier1941-0069
dc.identifierWOS:000327550200008
dc.identifier10.1109/TMAG.2013.2272214
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/82397
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/82397
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1277913
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionIn this work, we theoretically study the spin-dependent transport in a magnetic tunnel junction (MTJ). Using a simple model and ballistic transport, the magnetic polarization of the tunneling current on this system is studied by focusing on the tunneling of s and d electrons. We investigate the tunneling of these electrons through potential barriers, which represents the insulating layer between the ferromagnetic electrodes. We also examine how the conductance depends on voltage applied between the electrodes and on the effective mass of the electrons. The conductance is controlled by the transmission coefficient of the tunnel effect, and qualitatively it is known that tunneling probability of the electrons is lower than the electrons. We also estimate the effect of the tunneling magnetoresistance (TMR) and it is strongly influenced by the effective mass of the electrons. The electrons do not contribute significantly to the TMR.
dc.description49
dc.description12
dc.description5635
dc.description5638
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionFAPESP [FAPESP 2011/19298-4]
dc.languageen
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.publisherPiscataway
dc.publisherEUA
dc.relationIeee Transactions On Magnetics
dc.relationIEEE Trans. Magn.
dc.rightsfechado
dc.rightshttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dc.sourceWeb of Science
dc.subjectMagnetoresistance
dc.subjecttunneling
dc.subjectLarge Magnetoresistance
dc.subjectJunctions
dc.titleMagnetic Polarization of the Tunneling Current
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución