ANODIC NIOBIUM PENTOXIDE FILMS - GROWTH AND THICKNESS DETERMINATION BY INSITU OPTOELECTROCHEMICAL MEASUREMENTS

dc.creatorJULIAO, JF
dc.creatorCHAGAS, JWR
dc.creatorCESAR, HL
dc.creatorDIAS, NL
dc.creatorDECKER, F
dc.creatorGOMES, UU
dc.date1991
dc.date2014-12-16T11:33:19Z
dc.date2015-11-26T16:58:19Z
dc.date2014-12-16T11:33:19Z
dc.date2015-11-26T16:58:19Z
dc.date.accessioned2018-03-28T23:45:55Z
dc.date.available2018-03-28T23:45:55Z
dc.identifierElectrochimica Acta. Pergamon-elsevier Science Ltd, v. 36, n. 8, n. 1297, n. 1300, 1991.
dc.identifier0013-4686
dc.identifierWOS:A1991FX08000007
dc.identifier10.1016/0013-4686(91)80008-V
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/77595
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/77595
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/77595
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1277890
dc.descriptionData on optical reflectance and anodization voltage, obtained during the galvanostatic anodization of metallic niobium foils in an H3PO4(1%) solution at room temperature were simultaneously recorded as a function of time, to determine the thickness of the Nb2O5 films formed. From these data, plots of film thickness vs anodization voltage were obtained. A linear relation was always observed and in all cases but one, an angular coefficient of 22 angstrom V-1 was verified.
dc.description36
dc.description8
dc.description1297
dc.description1300
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationElectrochimica Acta
dc.relationElectrochim. Acta
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectANODIZATION
dc.subjectINTERFERENCE
dc.subjectINTERFACE INTERFEROMETRY
dc.subjectOXIDE
dc.titleANODIC NIOBIUM PENTOXIDE FILMS - GROWTH AND THICKNESS DETERMINATION BY INSITU OPTOELECTROCHEMICAL MEASUREMENTS
dc.typeArtículos de revistas


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