dc.creatorALGARTE, ACS
dc.creatorVASCONCELLOS, AR
dc.creatorLUZZI, R
dc.date1993
dc.dateJUL
dc.date2014-12-16T11:32:56Z
dc.date2015-11-26T16:56:39Z
dc.date2014-12-16T11:32:56Z
dc.date2015-11-26T16:56:39Z
dc.date.accessioned2018-03-28T23:44:07Z
dc.date.available2018-03-28T23:44:07Z
dc.identifierSolid State Communications. Pergamon-elsevier Science Ltd, v. 87, n. 4, n. 299, n. 303, 1993.
dc.identifier0038-1098
dc.identifierWOS:A1993LQ22600009
dc.identifier10.1016/0038-1098(93)90647-6
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/61851
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/61851
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/61851
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1277443
dc.descriptionAmbipolar diffusion of photoinjected carriers in nonequilibrium polar semiconductor plays, in conjunction with other effects, an important role in the relaxation processes in such hot carrier systems, providing a mechanism for a slowing down of the relaxation processes. Diffusion processes are governed by an ambipolar diffusion coefficient. In these far-from-equilibrium semiconductors such transport coefficient depends on the nonequilibrium macroscopic state of the sample, as it evolves in time. Resorting to an informational statistical thermodynamics, we derive an expression for this ambipolar diffusion coefficient accounting for its dependence on the time evolution of the dissipative processes that develop in the medium. The theoretical results are compared with experimental data obtaining a good agreement.
dc.description87
dc.description4
dc.description299
dc.description303
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationSolid State Communications
dc.relationSolid State Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectGaas
dc.subjectRelaxation
dc.subjectScattering
dc.subjectUltrafast
dc.subjectKinetics
dc.subjectDynamics
dc.titleDIFFUSION OF PHOTOINJECTED CARRIERS IN NONEQUILIBRIUM POLAR SEMICONDUCTORS
dc.typeArtículos de revistas


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