Vertical stacks of InAs quantum wires in an InP matrix

dc.creatorGutierrez, HR
dc.creatorCotta, MA
dc.creatorde Carvalho, MMG
dc.date2003
dc.dateJUN
dc.date2014-07-30T19:02:35Z
dc.date2015-11-26T16:55:22Z
dc.date2014-07-30T19:02:35Z
dc.date2015-11-26T16:55:22Z
dc.date.accessioned2018-03-28T23:42:39Z
dc.date.available2018-03-28T23:42:39Z
dc.identifierJournal Of Crystal Growth. Elsevier Science Bv, v. 254, n. 41671, n. 1, n. 5, 2003.
dc.identifier0022-0248
dc.identifierWOS:000183234700001
dc.identifier10.1016/S0022-0248(03)01095-9
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/72729
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/72729
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1277080
dc.descriptionIn this work, multilayered films-consisting of layers of self-assembled InAs quantum wires separated by InP spacers-were deposited on (0 0 1) InP substrates. We studied the vertical alignment of the nanostructures by using cross-section transmission electron microscopy (XTEM). A clear relation between the geometry of the wire cross-section and the stacking angles was observed. For asymmetric wires the stacking angle with respect to the growing direction is larger. Moreover, XTEM shows that the strain field generated by two nanowires can induce the nucleation of a unique wider nanowire in the subsequent InAs layer. Similarly to quantum-dot multilayers systems, this mechanism could produce uniform width distribution for the self-assembled nanowires. (C) 2003 Elsevier Science B.V. All rights reserved.
dc.description254
dc.description41671
dc.description1
dc.description5
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationJournal Of Crystal Growth
dc.relationJ. Cryst. Growth
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectnanostructures
dc.subjectchemical beam epitaxy
dc.subjectnanomaterials
dc.subjectsemiconducting
dc.subjectIII-V materials
dc.subjectSelf-organization
dc.subjectDot Superlattices
dc.subjectLateral Correlations
dc.subjectGrowth
dc.subjectMultilayers
dc.subjectInp(001)
dc.subjectIslands
dc.subjectStrain
dc.subjectNanostructures
dc.subjectExchange
dc.titleVertical stacks of InAs quantum wires in an InP matrix
dc.typeArtículos de revistas


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