Cyclotron effective mass and Lande g factor in GaAs-Ga1-xAlxAs quantum wells under growth-direction applied magnetic fields

dc.creatorde Dios-Leyva, M
dc.creatorPorras-Montenegro, N
dc.creatorBrandi, HS
dc.creatorOliveira, LE
dc.date2006
dc.dateMAY 15
dc.date2014-11-18T11:19:32Z
dc.date2015-11-26T16:54:23Z
dc.date2014-11-18T11:19:32Z
dc.date2015-11-26T16:54:23Z
dc.date.accessioned2018-03-28T23:41:39Z
dc.date.available2018-03-28T23:41:39Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 99, n. 10, 2006.
dc.identifier0021-8979
dc.identifierWOS:000237943800039
dc.identifier10.1063/1.2195885
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/57557
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/57557
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/57557
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1276842
dc.descriptionWe have performed a theoretical study of the cyclotron effective mass and electron effective Lande g(parallel to) factor in semiconductor GaAs-Ga1-xAlxAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. The theoretical approach is within the nonparabolic and effective-mass approximation and via an Ogg-McCombe effective Hamiltonian [Proc. Phys. Soc. London 89, 431 (1969); Phys. Rev. 181, 1206 (1969)] for the electron in the conduction band of the GaAs-Ga1-xAlxAs heterostructure, which allows a unified treatment of both the cyclotron mass and g(parallel to) factor. Calculations are performed for different widths of the GaAs-Ga1-xAlxAs quantum wells and as functions of the applied magnetic field, with results in very good agreement with reported experimental measurements of the electron cyclotron effective mass and g(parallel to) factor. (c) 2006 American Institute of Physics.
dc.description99
dc.description10
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectElectron G-factor
dc.subjectConduction-band
dc.subjectGaas
dc.subjectResonance
dc.subjectAnisotropy
dc.subjectHeterostructures
dc.subjectNonparabolicity
dc.subjectSemiconductors
dc.subjectSuperlattices
dc.subjectStates
dc.titleCyclotron effective mass and Lande g factor in GaAs-Ga1-xAlxAs quantum wells under growth-direction applied magnetic fields
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución