Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs/Ga1-xAlxAs quantum wells

dc.creatorde Dios-Leyva, M
dc.creatorDuque, CA
dc.creatorOliveira, LE
dc.date2007
dc.dateJAN
dc.date2014-11-18T08:35:14Z
dc.date2015-11-26T16:53:02Z
dc.date2014-11-18T08:35:14Z
dc.date2015-11-26T16:53:02Z
dc.date.accessioned2018-03-28T23:40:04Z
dc.date.available2018-03-28T23:40:04Z
dc.identifierPhysical Review B. Amer Physical Soc, v. 75, n. 3, 2007.
dc.identifier1098-0121
dc.identifierWOS:000243895400085
dc.identifier10.1103/PhysRevB.75.035303
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/64124
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/64124
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/64124
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1276456
dc.descriptionThe variational procedure in the effective-mass and parabolic-band approximations is used in order to investigate the effects of crossed electric and in-plane magnetic fields on the electronic and exciton properties in semiconductor heterostructures. Calculations are performed for bulk GaAs and GaAs/Ga1-xAlxAs quantum wells, for applied magnetic fields parallel to the layers and electric fields in the growth direction, and it is shown that the combined effects on the heterostructure properties of the applied crossed electric and magnetic fields and the direct coupling between the center-of-mass and internal exciton motions may be dealt with via a simple parameter representing the spatial distance between the centers of the electron and hole magnetic parabolas. Exciton properties are analyzed by using a simple hydrogenlike envelope excitonic wave function and present theoretical results are found in fair agreement with available experimental measurements on the diamagnetic shift of the photoluminescence peak position of GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields.
dc.description75
dc.description3
dc.languageen
dc.publisherAmer Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.rightshttp://publish.aps.org/authors/transfer-of-copyright-agreement
dc.sourceWeb of Science
dc.subjectSpatially Indirect Excitons
dc.subjectIntradonor Absorption-spectra
dc.subjectPhotoluminescence Spectra
dc.subjectBinding-energies
dc.subjectExternal Fields
dc.subjectMagnetoexcitons
dc.subjectSuperlattices
dc.subjectHeterostructures
dc.subjectTransitions
dc.subjectDispersion
dc.titleEffects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs/Ga1-xAlxAs quantum wells
dc.typeArtículos de revistas


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