dc.creatorde Dios-Leyva, M
dc.creatorReyes-Gomez, E
dc.creatorPerdomo-Leiva, CA
dc.creatorOliveira, LE
dc.date2006
dc.dateFEB
dc.date2014-11-17T20:55:16Z
dc.date2015-11-26T16:46:31Z
dc.date2014-11-17T20:55:16Z
dc.date2015-11-26T16:46:31Z
dc.date.accessioned2018-03-28T23:32:23Z
dc.date.available2018-03-28T23:32:23Z
dc.identifierPhysical Review B. Amer Physical Soc, v. 73, n. 8, 2006.
dc.identifier1098-0121
dc.identifierWOS:000235669100060
dc.identifier10.1103/PhysRevB.73.085316
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65034
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/65034
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65034
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1274551
dc.descriptionThe envelope-function approach is used to theoretically study the effects of in-plane magnetic fields on the cyclotron effective mass and Lande g(perpendicular to)-factor associated to conduction electrons in single GaAs-(Ga,Al)As quantum wells. Non-parabolic and anisotropy effects are included in the calculations within the Ogg-McCombe effective Hamiltonian to describe the electron states in the semiconductor heterostructure. The electronic structure and both the cyclotron effective mass and Lande g(perpendicular to)-factor were obtained, by expanding the corresponding envelope wave functions in terms of harmonic-oscillator wave functions, as functions of the in-plane magnetic field, cyclotron orbit-center position, and quantum-well widths. This procedure allows us to consider the different terms in the Hamiltonian on equal footing, avoiding therefore the use of approximate methods to obtain the envelope wave functions and the corresponding energy spectrum. Results obtained for the Lande g(perpendicular to)-factor were found in quite good agreement with available experimental measurements.
dc.description73
dc.description8
dc.languageen
dc.publisherAmer Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.rightshttp://publish.aps.org/authors/transfer-of-copyright-agreement
dc.sourceWeb of Science
dc.subject2-dimensional Electron-gas
dc.subjectSubband Landau-levels
dc.subjectGaas/ga1-xalxas Heterostructures
dc.subjectConduction-band
dc.subjectSpin-resonance
dc.subjectGaas
dc.subjectAnisotropy
dc.subjectSemiconductors
dc.subjectStates
dc.subjectHeterojunctions
dc.titleEffects of non-parabolicity and in-plane magnetic fields on the cyclotron effective mass and g(perpendicular to)-factor in GaAs-(Ga,Al)As quantum wells
dc.typeArtículos de revistas


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