| dc.creator | Brandi, HS | |
| dc.creator | Latge, A | |
| dc.creator | Oliveira, LE | |
| dc.date | 1998 | |
| dc.date | 2014-12-02T16:30:08Z | |
| dc.date | 2015-11-26T16:43:49Z | |
| dc.date | 2014-12-02T16:30:08Z | |
| dc.date | 2015-11-26T16:43:49Z | |
| dc.date.accessioned | 2018-03-28T23:28:57Z | |
| dc.date.available | 2018-03-28T23:28:57Z | |
| dc.identifier | Solid State Communications. Pergamon-elsevier Science Ltd, v. 107, n. 1, n. 31, n. 34, 1998. | |
| dc.identifier | 0038-1098 | |
| dc.identifier | WOS:000073791700006 | |
| dc.identifier | 10.1016/S0038-1098(98)00149-5 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/61171 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/61171 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/61171 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1273709 | |
| dc.description | We present a simple theoretical approach to treat the interaction of a laser field with a semiconductor system, in which the effect of the laser field is incorporated within a renormalization of the semiconductor effective mass. As an application, we discuss the effects of laser dressing on the transition energies between the 1s- and 2p(+/-)-like states of hydrogenic donors in GaAs-Ga1-xAlxAs QWs, in the presence of an external homogeneous magnetic field. It is shown that the modifications on the intradonor transitions due to weak intensity-laser dressing may be as important as the effects of a strongly applied magnetic field. (C) 1998 Elsevier Science Ltd. All rights reserved. | |
| dc.description | 107 | |
| dc.description | 1 | |
| dc.description | 31 | |
| dc.description | 34 | |
| dc.language | en | |
| dc.publisher | Pergamon-elsevier Science Ltd | |
| dc.publisher | Oxford | |
| dc.publisher | Inglaterra | |
| dc.relation | Solid State Communications | |
| dc.relation | Solid State Commun. | |
| dc.rights | fechado | |
| dc.rights | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
| dc.source | Web of Science | |
| dc.subject | quantum wells | |
| dc.subject | impurities in semiconductors | |
| dc.subject | electronic band structure | |
| dc.subject | Intradonor Absorption-spectra | |
| dc.subject | Quantum-wells | |
| dc.subject | Hydrogenic Impurities | |
| dc.subject | Magnetic-fields | |
| dc.subject | External Fields | |
| dc.subject | Transitions | |
| dc.subject | Excitons | |
| dc.subject | States | |
| dc.title | Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures | |
| dc.type | Artículos de revistas | |
