Photocurrent Calculation of Intersubband Transitions to Continuum-Localized States in GaAs/AlGaAs Multiquantum Wells for Mid-Infrared Photodetector

dc.creatorPenello, GM
dc.creatorDegani, MH
dc.creatorMaialle, MZ
dc.creatorPires, MP
dc.creatorSouza, PL
dc.date2013
dc.dateSEP
dc.date2014-07-30T14:31:43Z
dc.date2015-11-26T16:42:50Z
dc.date2014-07-30T14:31:43Z
dc.date2015-11-26T16:42:50Z
dc.date.accessioned2018-03-28T23:27:33Z
dc.date.available2018-03-28T23:27:33Z
dc.identifierIeee Journal Of Quantum Electronics. Ieee-inst Electrical Electronics Engineers Inc, v. 49, n. 9, n. 747, n. 752, 2013.
dc.identifier0018-9197
dc.identifierWOS:000322665800003
dc.identifier10.1109/JQE.2013.2272242
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/59591
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/59591
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1273396
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionIn this paper, we propose a system based on GaAs heterostructure where it is possible to generate photocurrent with mid-infrared radiation. This system is based on a central quantum well (CQW) embedded in a superlattice. Because of the CQW, which acts as a defect, there are localized states between the mini-bands in the continuum of the conduction band. Unlike the usual systems where the final states are delocalized, the oscillator strength due to the transitions between electrons occupying the ground-state to these continuum-localized states is enhanced. An applied electrical bias mixes the mini-band states with the localized state in the continuum, and due to the combined effects of strong oscillator strength and high transmission coefficients, narrow and sharp peaks are observed in the photocurrent when exciting these final states. We calculate and present results of the absorption and photocurrent for a system built to operate at 4.1 mu m and discuss their dependence with the bias applied to the system and with the intensity of the incident radiation.
dc.description49
dc.description9
dc.description747
dc.description752
dc.descriptionINCT/MCT
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.languageen
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.publisherPiscataway
dc.publisherEUA
dc.relationIeee Journal Of Quantum Electronics
dc.relationIEEE J. Quantum Electron.
dc.rightsfechado
dc.rightshttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dc.sourceWeb of Science
dc.subjectInfrared detectors
dc.subjectquantum wells
dc.subjectsemiconductor devices
dc.subjectsemiconductor superlattices
dc.subjectMinigap-confined States
dc.subjectDoped Quantum-wells
dc.subjectSemiconductor Nanostructures
dc.subjectBound-states
dc.subjectBarrier
dc.subjectLaser
dc.subjectQwip
dc.titlePhotocurrent Calculation of Intersubband Transitions to Continuum-Localized States in GaAs/AlGaAs Multiquantum Wells for Mid-Infrared Photodetector
dc.typeArtículos de revistas


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