| dc.creator | Redmer, R | |
| dc.creator | Madureira, JR | |
| dc.creator | Fitzer, N | |
| dc.creator | Goodnick, SM | |
| dc.creator | Schattke, W | |
| dc.creator | Scholl, E | |
| dc.date | 2000 | |
| dc.date | 42005 | |
| dc.date | 2014-12-02T16:28:08Z | |
| dc.date | 2015-11-26T16:36:10Z | |
| dc.date | 2014-12-02T16:28:08Z | |
| dc.date | 2015-11-26T16:36:10Z | |
| dc.date.accessioned | 2018-03-28T23:18:48Z | |
| dc.date.available | 2018-03-28T23:18:48Z | |
| dc.identifier | Journal Of Applied Physics. Amer Inst Physics, v. 87, n. 2, n. 781, n. 788, 2000. | |
| dc.identifier | 0021-8979 | |
| dc.identifier | WOS:000084506500026 | |
| dc.identifier | 10.1063/1.371941 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/66924 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/66924 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/66924 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1271719 | |
| dc.description | Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade , Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS. (C) 2000 American Institute of Physics. [S0021-8979(00)03002-4]. | |
| dc.description | 87 | |
| dc.description | 2 | |
| dc.description | 781 | |
| dc.description | 788 | |
| dc.language | en | |
| dc.publisher | Amer Inst Physics | |
| dc.publisher | Woodbury | |
| dc.publisher | EUA | |
| dc.relation | Journal Of Applied Physics | |
| dc.relation | J. Appl. Phys. | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Quantum Transport-theory | |
| dc.subject | Monte-carlo Simulation | |
| dc.subject | Hot-electron Transport | |
| dc.subject | Band-structure | |
| dc.subject | Zns | |
| dc.subject | Zincblende | |
| dc.subject | Equations | |
| dc.subject | Wurtzite | |
| dc.subject | Devices | |
| dc.subject | Systems | |
| dc.title | Field effect on the impact ionization rate in semiconductors | |
| dc.type | Artículos de revistas | |
