Artículos de revistas
Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxide-semiconductor field-effect transistors
Registro en:
Journal Of Applied Physics. Amer Inst Physics, v. 97, n. 10, 2005.
0021-8979
WOS:000230168100156
10.1063/1.1904727
Autor
de Freitas, LR
da Silva, EC
Mansanares, AM
Pimentel, MBC
Filho, SE
Batista, JA
Institución
Resumen
We investigated the effect of electrostatic discharge on n-channel metal-oxide-semiconductor field-effect transistors using the thermoreflectance microscopy. The gate terminals of the transistors were submitted to electrostatic pulses on a zap system that respects the human body model. The pulse intensity varied from 40 to 140 V in a cumulative sequence. Electrical characterization showed that the transistor threshold voltage was no longer positive for pulses of 110 V and higher. No significant changes in the thermoreflectance maps were observed in these cases. For pulses of 140 V a large leakage current appeared, and the thermoreflectance maps revealed strong peaks (localized spot) associated with the induced damage. (c) 2005 American Institute of Physics. 97 10 1