dc.creatorTriques, ALC
dc.creatorIikawa, F
dc.creatorBrum, JA
dc.creatorMaialle, MZ
dc.creatorPereira, RG
dc.creatorBorghs, G
dc.date1999
dc.dateMAR
dc.date2014-12-02T16:27:45Z
dc.date2015-11-26T16:34:53Z
dc.date2014-12-02T16:27:45Z
dc.date2015-11-26T16:34:53Z
dc.date.accessioned2018-03-28T23:17:12Z
dc.date.available2018-03-28T23:17:12Z
dc.identifierSuperlattices And Microstructures. Academic Press Ltd, v. 25, n. 3, n. 551, n. 554, 1999.
dc.identifier0749-6036
dc.identifierWOS:000079265000008
dc.identifier10.1006/spmi.1996.0236
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/78473
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/78473
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/78473
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1271335
dc.descriptionWe studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.
dc.description25
dc.description3
dc.description551
dc.description554
dc.languageen
dc.publisherAcademic Press Ltd
dc.publisherLondon
dc.publisherInglaterra
dc.relationSuperlattices And Microstructures
dc.relationSuperlattices Microstruct.
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectsemiconductor
dc.subjectquantum well
dc.subjectspin polarization
dc.subjectRelaxation
dc.titleCarrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well
dc.typeArtículos de revistas


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