| dc.creator | Antonelli, A | |
| dc.creator | Justo, JF | |
| dc.creator | Fazzio, A | |
| dc.date | 1999 | |
| dc.date | AUG 15 | |
| dc.date | 2014-12-02T16:28:26Z | |
| dc.date | 2015-11-26T16:32:15Z | |
| dc.date | 2014-12-02T16:28:26Z | |
| dc.date | 2015-11-26T16:32:15Z | |
| dc.date.accessioned | 2018-03-28T23:13:36Z | |
| dc.date.available | 2018-03-28T23:13:36Z | |
| dc.identifier | Physical Review B. American Physical Soc, v. 60, n. 7, n. 4711, n. 4714, 1999. | |
| dc.identifier | 0163-1829 | |
| dc.identifier | WOS:000082241500061 | |
| dc.identifier | 10.1103/PhysRevB.60.4711 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/70590 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/70590 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/70590 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1270451 | |
| dc.description | We performed a theoretical investigation of the interaction of point defects (vacancy and self-interstitials) with an intrinsic stacking fault in silicon using ab initio total-energy calculations. Defects at the fault and in the crystalline environment display a different behavior, which is evidenced by changes in formation energy and electronic structure. The formation energies for the vacancy and the [110]-split interstitial are lower at the intrinsic stacking fault than those in the crystal, indicating that in nonequilibrium conditions, intrinsic stacking faults can act, together with other extended defects, as a sink for point defects, and also that in equilibrium conditions, there can be a higher concentration of such defects at the fault than that in bulk silicon. [S0163-1829(99)03631-0]. | |
| dc.description | 60 | |
| dc.description | 7 | |
| dc.description | 4711 | |
| dc.description | 4714 | |
| dc.language | en | |
| dc.publisher | American Physical Soc | |
| dc.publisher | College Pk | |
| dc.publisher | EUA | |
| dc.relation | Physical Review B | |
| dc.relation | Phys. Rev. B | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Stacking-faults | |
| dc.subject | Partial Dislocations | |
| dc.subject | Molecular-dynamics | |
| dc.subject | Ab-initio | |
| dc.subject | Silicon | |
| dc.subject | Diffusion | |
| dc.subject | Pseudopotentials | |
| dc.subject | Mobility | |
| dc.subject | States | |
| dc.subject | Model | |
| dc.title | Point defect interactions with extended defects in semiconductors | |
| dc.type | Artículos de revistas | |
