dc.creator | Ribeiro, NS | |
dc.creator | Gallep, CM | |
dc.creator | Conforti, E | |
dc.date | 2013 | |
dc.date | MAY | |
dc.date | 2014-07-30T18:31:52Z | |
dc.date | 2015-11-26T16:31:24Z | |
dc.date | 2014-07-30T18:31:52Z | |
dc.date | 2015-11-26T16:31:24Z | |
dc.date.accessioned | 2018-03-28T23:12:26Z | |
dc.date.available | 2018-03-28T23:12:26Z | |
dc.identifier | Microwave And Optical Technology Letters. Wiley-blackwell, v. 55, n. 5, n. 998, n. 1001, 2013. | |
dc.identifier | 0895-2477 | |
dc.identifier | WOS:000316695000015 | |
dc.identifier | 10.1002/mop.27496 | |
dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/71433 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/71433 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1270194 | |
dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description | The erasing of optical carrier intensity modulation and posterior data rewriting are analyzed for two semiconductor optical amplifiers with different active lengths: 2 mm and 8 mm long.Input signal extinction ratios (ERin) varying from 3.5 dB up to 10 dB are tested for the downstream channel at different bit rates (from 7 Gb/s up to 56 Gb/s), followed by remodulation of the upstream channel at 7 Gb/s. The ultra-long 8 mm device shows superior performance, working error-free for bit rates up to 30 Gb/s, with negligible power penalties for moderate ERin. However, for high bit rates (>40 Gb/s) and high input extinction ratios (ERin = 10 dB), the 8 mm device shows error-floor at BER = 106. In comparison, even for moderate ERin at 40 Gb/s, the 2 mm device already presents error-floors at BER = 103. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:9981001, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27496 | |
dc.description | 55 | |
dc.description | 5 | |
dc.description | 998 | |
dc.description | 1001 | |
dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description | CNPq [2007/56024-4] | |
dc.description | FAPESP [2007/56024-4] | |
dc.description | FAPESP [2005/51689-2, 2009/08537-8] | |
dc.language | en | |
dc.publisher | Wiley-blackwell | |
dc.publisher | Hoboken | |
dc.publisher | EUA | |
dc.relation | Microwave And Optical Technology Letters | |
dc.relation | Microw. Opt. Technol. Lett. | |
dc.rights | fechado | |
dc.rights | http://olabout.wiley.com/WileyCDA/Section/id-406071.html | |
dc.source | Web of Science | |
dc.subject | onlinear optics | |
dc.subject | optical signal processing | |
dc.subject | semiconductor optical amplifier | |
dc.subject | Modulation | |
dc.subject | Extinction | |
dc.subject | Networks | |
dc.title | Semiconductor optical amplifier cavity length impact over data erasing/rewriting | |
dc.type | Artículos de revistas | |