dc.creatorRibeiro, NS
dc.creatorGallep, CM
dc.creatorConforti, E
dc.date2013
dc.dateMAY
dc.date2014-07-30T18:31:52Z
dc.date2015-11-26T16:31:24Z
dc.date2014-07-30T18:31:52Z
dc.date2015-11-26T16:31:24Z
dc.date.accessioned2018-03-28T23:12:26Z
dc.date.available2018-03-28T23:12:26Z
dc.identifierMicrowave And Optical Technology Letters. Wiley-blackwell, v. 55, n. 5, n. 998, n. 1001, 2013.
dc.identifier0895-2477
dc.identifierWOS:000316695000015
dc.identifier10.1002/mop.27496
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/71433
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/71433
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1270194
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionThe erasing of optical carrier intensity modulation and posterior data rewriting are analyzed for two semiconductor optical amplifiers with different active lengths: 2 mm and 8 mm long.Input signal extinction ratios (ERin) varying from 3.5 dB up to 10 dB are tested for the downstream channel at different bit rates (from 7 Gb/s up to 56 Gb/s), followed by remodulation of the upstream channel at 7 Gb/s. The ultra-long 8 mm device shows superior performance, working error-free for bit rates up to 30 Gb/s, with negligible power penalties for moderate ERin. However, for high bit rates (>40 Gb/s) and high input extinction ratios (ERin = 10 dB), the 8 mm device shows error-floor at BER = 106. In comparison, even for moderate ERin at 40 Gb/s, the 2 mm device already presents error-floors at BER = 103. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:9981001, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27496
dc.description55
dc.description5
dc.description998
dc.description1001
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionCNPq [2007/56024-4]
dc.descriptionFAPESP [2007/56024-4]
dc.descriptionFAPESP [2005/51689-2, 2009/08537-8]
dc.languageen
dc.publisherWiley-blackwell
dc.publisherHoboken
dc.publisherEUA
dc.relationMicrowave And Optical Technology Letters
dc.relationMicrow. Opt. Technol. Lett.
dc.rightsfechado
dc.rightshttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
dc.sourceWeb of Science
dc.subjectonlinear optics
dc.subjectoptical signal processing
dc.subjectsemiconductor optical amplifier
dc.subjectModulation
dc.subjectExtinction
dc.subjectNetworks
dc.titleSemiconductor optical amplifier cavity length impact over data erasing/rewriting
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución