Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

dc.creatorDuarte, CA
dc.creatorda Silva, ECF
dc.creatorQuivy, AA
dc.creatorda Silva, MJ
dc.creatorMartini, S
dc.creatorLeite, JR
dc.creatorMeneses, EA
dc.creatorLauretto, E
dc.date2003
dc.dateMAY 15
dc.date2014-11-15T23:58:28Z
dc.date2015-11-26T16:31:03Z
dc.date2014-11-15T23:58:28Z
dc.date2015-11-26T16:31:03Z
dc.date.accessioned2018-03-28T23:12:07Z
dc.date.available2018-03-28T23:12:07Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 93, n. 10, n. 6279, n. 6283, 2003.
dc.identifier0021-8979
dc.identifierWOS:000182789700066
dc.identifier10.1063/1.1568538
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/80468
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/80468
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/80468
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1270116
dc.descriptionPhotoluminescence (PL) spectroscopy and atomic-force microscopy (AFM) were used to investigate the size evolution of InAs quantum dots on GaAs(001) as a function of the amount of InAs material. Different families of islands were observed in the AFM images and unambiguously identified in the PL spectra, together with the signal of the wetting layer. PL measurements carried out at low and intermediate temperatures showed a thermal carrier redistribution among dots belonging to different families. The physical origin of this behavior is explained in terms of the different temperature dependence of the carrier-capture rate into the quantum dots. At high temperatures, an enhancement of the total PL-integrated intensity of the largest-sized quantum dots was attributed to the increase of diffusivity of the photogenerated carriers inside the wetting layer. (C) 2003 American Institute of Physics.
dc.description93
dc.description10
dc.description1
dc.description6279
dc.description6283
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectMolecular-beam Epitaxy
dc.subjectOptical-properties
dc.subjectInas
dc.subjectGaas
dc.subjectRelaxation
dc.subjectGrowth
dc.subjectWells
dc.subjectPhotoluminescence
dc.subjectEvolution
dc.subjectGaas(001)
dc.titleInfluence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
dc.typeArtículos de revistas


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