Structure of PbTe(SiO2)/SiO2 multilayers deposited on Si(111)

dc.creatorKellermann, G
dc.creatorRodriguez, E
dc.creatorJimenez, E
dc.creatorCesar, CL
dc.creatorBarbosa, LC
dc.creatorCraievich, AF
dc.date2010
dc.dateJUN
dc.date2014-11-19T19:22:01Z
dc.date2015-11-26T16:28:57Z
dc.date2014-11-19T19:22:01Z
dc.date2015-11-26T16:28:57Z
dc.date.accessioned2018-03-28T23:10:01Z
dc.date.available2018-03-28T23:10:01Z
dc.identifierJournal Of Applied Crystallography. Wiley-blackwell, v. 43, n. 385, n. 393, 2010.
dc.identifier0021-8898
dc.identifierWOS:000277392600001
dc.identifier10.1107/S0021889810005625
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/75390
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/75390
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/75390
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269604
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionThe structure of thin films composed of a multilayer of PbTe nanocrystals embedded in SiO2, named as PbTe(SiO2), between homogeneous layers of amorphous SiO2 deposited on a single-crystal Si( 111) substrate was studied by grazing-incidence small-angle X-ray scattering (GISAXS) as a function of PbTe content. PbTe(SiO2)/SiO2 multilayers were produced by alternately applying plasma-enhanced chemical vapour deposition and pulsed laser deposition techniques. From the analysis of the experimental GISAXS patterns, the average radius and radius dispersion of PbTe nanocrystals were determined. With increasing deposition dose the size of the PbTe nanocrystals progressively increases while their number density decreases. Analysis of the GISAXS intensity profiles along the normal to the sample surface allowed the determination of the period parameter of the layers and a structure parameter that characterizes the disorder in the distances between PbTe layers. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserved
dc.description43
dc.description3
dc.description385
dc.description393
dc.descriptionBrazilian Synchrotron Light Laboratory (LNLS)
dc.descriptionPRONEX
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.languageen
dc.publisherWiley-blackwell
dc.publisherMalden
dc.publisherEUA
dc.relationJournal Of Applied Crystallography
dc.relationJ. Appl. Crystallogr.
dc.rightsaberto
dc.rightshttp://olabout.wiley.com/WileyCDA/Section/id-406071.html
dc.sourceWeb of Science
dc.subjectX-ray-scattering
dc.subjectGrowth
dc.subjectNanocrystals
dc.subjectAbsorption
dc.subjectRoughness
dc.subjectSystems
dc.subjectGisaxs
dc.subjectSphere
dc.subjectSize
dc.titleStructure of PbTe(SiO2)/SiO2 multilayers deposited on Si(111)
dc.typeArtículos de revistas


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