Light scattering and atomic force microscopy study of InAs island formation on InP

dc.creatorRasnik, I
dc.creatorBrasil, MJSP
dc.creatorCerdeira, F
dc.creatorMendonca, CAC
dc.creatorCotta, MA
dc.date2000
dc.dateFEB 1
dc.date2014-12-02T16:28:17Z
dc.date2015-11-26T16:28:50Z
dc.date2014-12-02T16:28:17Z
dc.date2015-11-26T16:28:50Z
dc.date.accessioned2018-03-28T23:09:53Z
dc.date.available2018-03-28T23:09:53Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 87, n. 3, n. 1165, n. 1171, 2000.
dc.identifier0021-8979
dc.identifierWOS:000084822400024
dc.identifier10.1063/1.371994
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/81025
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/81025
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/81025
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269573
dc.descriptionSome aspects of the morphology of InAs island formation on InP have been studied by atomic force microscopy, photoluminescence, photoluminescence excitation spectroscopy, and Raman scattering. The InAs layer is grown by chemical beam epitaxy on top of InP surfaces with sawtooth-like channels. The deposition of a thin InAs layer results in quantum dots strongly aligned along the InP channels. Subsequent annealing in an arsenic atmosphere produces growth and loss of coherency of the islands. Atomic force microscopy shows the changes in size and alignment of the islands. Optical measurements serve to give quantitative estimates of the strain distribution among the top of the InP buffer layer, the wetting layer and the islands for the differently treated samples. (C) 2000 American Institute of Physics. [S0021-8979(00)02003-X].
dc.description87
dc.description3
dc.description1165
dc.description1171
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherWoodbury
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectQuantum-dot Structures
dc.subjectOptical-transitions
dc.subjectStrain Distribution
dc.subjectRaman-scattering
dc.subjectElectronic-structure
dc.subjectExcited-states
dc.subjectGrowth
dc.subjectSpectroscopy
dc.subjectInxga1-xas
dc.subjectPhotoluminescence
dc.titleLight scattering and atomic force microscopy study of InAs island formation on InP
dc.typeArtículos de revistas


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