| dc.creator | Ribeiro, CTM | |
| dc.creator | Alvarez, F | |
| dc.creator | Zanatta, AR | |
| dc.date | 2002 | |
| dc.date | AUG 5 | |
| dc.date | 2014-11-19T16:26:58Z | |
| dc.date | 2015-11-26T16:28:32Z | |
| dc.date | 2014-11-19T16:26:58Z | |
| dc.date | 2015-11-26T16:28:32Z | |
| dc.date.accessioned | 2018-03-28T23:09:33Z | |
| dc.date.available | 2018-03-28T23:09:33Z | |
| dc.identifier | Applied Physics Letters. Amer Inst Physics, v. 81, n. 6, n. 1005, n. 1007, 2002. | |
| dc.identifier | 0003-6951 | |
| dc.identifier | WOS:000177171400019 | |
| dc.identifier | 10.1063/1.1498002 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/75468 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/75468 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/75468 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1269489 | |
| dc.description | Aluminum-nitrogen thin films have been obtained under well-controlled conditions by ion-beam-assisted deposition (IBAD). The films were deposited on crystalline silicon and sapphire substrates at relative low temperature (similar to325 K). Taking advantage of the ion energy control provided by the IBAD technique, the films were prepared with N-2(+) ions with energies ranging from 100 to 300 eV. After deposition, the films were investigated by in situ x-ray photoelectron spectroscopy, ex situ by optical spectroscopy, and x-ray diffraction. Detailed Raman scattering measurements in the 100-2500 cm(-1) wave number range were also performed revealing interesting features related to the atomic composition and structure of the films. The Raman data suggest that a misidentification of some vibration modes can lead to incorrect interpretations of the crystalline quality of aluminum-nitrogen films. Finally, the results indicate the suitability of IBAD to produce crystalline AlN films at considerably lower temperatures. (C) 2002 American Institute of Physics. | |
| dc.description | 81 | |
| dc.description | 6 | |
| dc.description | 1005 | |
| dc.description | 1007 | |
| dc.language | en | |
| dc.publisher | Amer Inst Physics | |
| dc.publisher | Melville | |
| dc.publisher | EUA | |
| dc.relation | Applied Physics Letters | |
| dc.relation | Appl. Phys. Lett. | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Pulsed-laser Deposition | |
| dc.subject | Wurtzite Aln | |
| dc.subject | Gan | |
| dc.title | Structural properties of aluminum-nitrogen films prepared at low temperature | |
| dc.type | Artículos de revistas | |
