dc.creatorMendonca, CAC
dc.creatorCotta, MA
dc.creatorMeneses, EA
dc.creatorCarvalho, MMG
dc.date1998
dc.dateMAY 15
dc.date2014-12-02T16:26:38Z
dc.date2015-11-26T16:28:11Z
dc.date2014-12-02T16:26:38Z
dc.date2015-11-26T16:28:11Z
dc.date.accessioned2018-03-28T23:09:11Z
dc.date.available2018-03-28T23:09:11Z
dc.identifierPhysical Review B. American Physical Soc, v. 57, n. 19, n. 12501, n. 12505, 1998.
dc.identifier0163-1829
dc.identifierWOS:000073761500103
dc.identifier10.1103/PhysRevB.57.12501
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/71377
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/71377
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/71377
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269395
dc.descriptionThe dynamics of island formation on strained epitaxial films is investigated using the system formed by InAs on InP. Island shape, size, and spatial distribution are determined by surface atom diffusion that is modified by the presence of steps and/or corrugations on the surface. Different step characteristics-type and density-are shown to strongly affect the islanding process. By controlling the morphology of the underlying InP film we were able to achieve InAs/InP structures with periodic spatial distribution in one single step of growth.
dc.description57
dc.description19
dc.description12501
dc.description12505
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectMolecular-beam Epitaxy
dc.subjectChemical-vapor-deposition
dc.subjectIngaas Quantum Dots
dc.subjectOrganized Growth
dc.subjectPhase-epitaxy
dc.subjectInas Islands
dc.subjectInp
dc.subjectGaas
dc.subjectWells
dc.subjectSuperlattices
dc.titleSelf-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
dc.typeArtículos de revistas


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