Infrared studies on films of carbosilazane and siloxazane networks

dc.creatorTrasferetti, BC
dc.creatorGelamo, RV
dc.creatorRouxinol, FP
dc.creatorde Moraes, MAB
dc.creatorDavanzo, CU
dc.date2005
dc.dateSEP 6
dc.date2014-11-18T13:56:10Z
dc.date2015-11-26T16:27:54Z
dc.date2014-11-18T13:56:10Z
dc.date2015-11-26T16:27:54Z
dc.date.accessioned2018-03-28T23:08:52Z
dc.date.available2018-03-28T23:08:52Z
dc.identifierChemistry Of Materials. Amer Chemical Soc, v. 17, n. 18, n. 4685, n. 4692, 2005.
dc.identifier0897-4756
dc.identifierWOS:000231742600020
dc.identifier10.1021/cm0503139o
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/80537
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/80537
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/80537
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269314
dc.descriptionThe present work describes the effects of diluting hexamethyldisilazane (HMDSN) vapor either in pure argon or in oxygen-argon mixtures on the solid film deposited from the resulting plasma. Such a dilution provides a manner of incorporating controllable amounts of Si-O groups into the solid film. The characterization of the films investigated here was made by longitudinal and transverse optical (LO and TO, respectively) functions in the mid-infrared calculated through the Kramers-Kronig analysis of transmittance spectra. The infrared analysis showed that the films were formed by silicon-centered distorted tetrahedra of the following type: Si(CH3)(x)BU(2-0.5x), where 0 <= x <= 3 and BU stands for bridging unit. For the sample deposited in the absence of O-2 in the discharge, BU = CH2 and NH; for the samples deposited with an O-2 flow rate (f(O2)) of 2.5 and 10 sccm, BU = CH2, NH, and O; and for the sample deposited with f(O2) of 20 sccm, BU = NH and O. The Delta(LO-TO) for the Si-O asymmetrical stretching increased from 0 (f(O2) = 0 sccm) to 73 cm(-1) (f(O2) = 20 sccm), while for the Si-N asymmetrical stretching it decreased from 20 (f(O2) = 0 sccm) to 3 cm(-1) (f(O2) = 20 sccm). These observations signal an increase in the Si-O-Si network and a decrease in the Si-NH-Si network as the oxygen flow increased. An interesting conclusion drawn from our analysis of the Si-H stretching mode position and Delta(LO-TO) for the AS1 band is that the films deposited in the presence of O-2 are not structurally homogeneous, but have domains with different proportions of O bridges.
dc.description17
dc.description18
dc.description4685
dc.description4692
dc.languageen
dc.publisherAmer Chemical Soc
dc.publisherWashington
dc.publisherEUA
dc.relationChemistry Of Materials
dc.relationChem. Mat.
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectChemical-vapor-deposition
dc.subjectAmorphous Hydrogenated Carbon
dc.subjectThin-films
dc.subjectVibrational-spectra
dc.subjectLo Modes
dc.subjectOptical-properties
dc.subjectSilicon-nitride
dc.subjectAb-initio
dc.subjectAbsorption
dc.subjectSpectroscopy
dc.titleInfrared studies on films of carbosilazane and siloxazane networks
dc.typeArtículos de revistas


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