dc.creatorMarques, FC
dc.creatorde Lima, MM
dc.creatorTaylor, PC
dc.date1999
dc.date44348
dc.date2014-12-02T16:28:14Z
dc.date2015-11-26T16:27:48Z
dc.date2014-12-02T16:28:14Z
dc.date2015-11-26T16:27:48Z
dc.date.accessioned2018-03-28T23:08:45Z
dc.date.available2018-03-28T23:08:45Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 74, n. 25, n. 3797, n. 3799, 1999.
dc.identifier0003-6951
dc.identifierWOS:000080857600015
dc.identifier10.1063/1.124183
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/81028
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/81028
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/81028
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269285
dc.descriptionWe report the observation of light-induced electron spin resonance (LESR) in amorphous hydrogenated germanium. Two new lines with zero crossings near g=2.01 and g=2.03 were detected and ascribed to electrons and holes in the conduction- and valence-band-tail states, respectively. The ratio between the LESR spin densities of both lines is approximately one, suggesting the absence of spin pairing, charge defect creation, or LESR of dangling bonds. The growth and decay spectra exhibit dispersive behavior with a dispersion parameter similar to 0.5. The decay spectrum is best fit assuming bimolecular recombination. The LESR spin density depends weakly on the photogeneration rate as a sublinear power law. (C) 1999 American Institute of Physics. [S0003-6951(99)03925-X].
dc.description74
dc.description25
dc.description3797
dc.description3799
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherWoodbury
dc.publisherEUA
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectSilicon
dc.subjectDefects
dc.subjectStates
dc.titleLight-induced electron spin resonance in amorphous hydrogenated germanium
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución