dc.creatorGirotto, EM
dc.creatorGazotti, WA
dc.creatorDe Paoli, MA
dc.date2000
dc.date38899
dc.date2014-12-02T16:26:27Z
dc.date2015-11-26T16:26:53Z
dc.date2014-12-02T16:26:27Z
dc.date2015-11-26T16:26:53Z
dc.date.accessioned2018-03-28T23:07:45Z
dc.date.available2018-03-28T23:07:45Z
dc.identifierJournal Of Physical Chemistry B. Amer Chemical Soc, v. 104, n. 26, n. 6124, n. 6127, 2000.
dc.identifier1089-5647
dc.identifierWOS:000088057100007
dc.identifier10.1021/jp994440s
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/59613
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/59613
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/59613
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1269025
dc.descriptionThe photoelectrochemical properties of poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) in contact with an electrolytic solution containing a redox couple were studied using the theories for the semiconductor-electrolyte interface. When this polymer-electrolyte interface is illuminated with h nu > Eg (gap energy) it exhibits cathodic photocurrent typical of p-type semiconductors, and the flat band potential, density of majority carriers, and the depletion layer thickness can be determined. To complete the band energy diagram of this polymer-electrolyte interface we obtained the band gap energy through the absorption and photocurrent spectra. The relatively low band gap energy (1.5 eV) and the photoeffects observed at the interface suggest its use as the absorbing material in photoelectrochemical cells.
dc.description104
dc.description26
dc.description6124
dc.description6127
dc.languageen
dc.publisherAmer Chemical Soc
dc.publisherWashington
dc.publisherEUA
dc.relationJournal Of Physical Chemistry B
dc.relationJ. Phys. Chem. B
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectThin-films
dc.subjectElectrodes
dc.titlePhotoelectrochemical properties of poly (3,4-ethylenedioxythiophene)
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución