dc.creatorMORELHAO, SL
dc.creatorCARDOSO, LP
dc.date1993
dc.dateNOV
dc.date2014-12-16T11:36:53Z
dc.date2015-11-26T16:25:50Z
dc.date2014-12-16T11:36:53Z
dc.date2015-11-26T16:25:50Z
dc.date.accessioned2018-03-28T23:06:33Z
dc.date.available2018-03-28T23:06:33Z
dc.identifierSolid State Communications. Pergamon-elsevier Science Ltd, v. 88, n. 6, n. 465, n. 469, 1993.
dc.identifier0038-1098
dc.identifierWOS:A1993MH83300013
dc.identifier10.1016/0038-1098(93)90615-T
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/54568
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/54568
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/54568
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1268718
dc.descriptionWe have developed a new method to analyze the stress state of heteroepitaxial systems using X-ray multiple diffraction (MD). A fitting program extends the MD theory for mosaic crystals to provide the position and profile of the normal and hybrid MD peaks. We use surface secondary beams in order to achieve high resolution in intensity and peak position. These conditions together with the absorption involved in the LS hybrid reflections enable us to test the stress state of the layer by determining the misfit dislocation and the degree of cohesion between the buffer and epitaxial layers. Here, the method was applied in the analysis of thin (500 Angstrom) and thick (1.2 mu m) GaAs layers grown by Vacuum Chemical Epitaxy (VCE) on Si (001).
dc.description88
dc.description6
dc.description465
dc.description469
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationSolid State Communications
dc.relationSolid State Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectEpitaxy
dc.subjectGrowth
dc.subjectLayers
dc.subjectGaas
dc.subjectSi
dc.titleANALYSIS OF INTERFACIAL MISFIT DISLOCATION BY X-RAY MULTIPLE DIFFRACTION
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución