Spatially indirect excitons in type-II quantum dots

dc.creatorMadureira, JR
dc.creatorde Godoy, MPF
dc.creatorBrasil, MJSP
dc.creatorIikawa, F
dc.date2007
dc.dateMAY 21
dc.date2014-11-16T21:15:37Z
dc.date2015-11-26T16:25:24Z
dc.date2014-11-16T21:15:37Z
dc.date2015-11-26T16:25:24Z
dc.date.accessioned2018-03-28T23:06:10Z
dc.date.available2018-03-28T23:06:10Z
dc.identifierApplied Physics Letters. Amer Inst Physics, v. 90, n. 21, 2007.
dc.identifier0003-6951
dc.identifierWOS:000246775900037
dc.identifier10.1063/1.2741601
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/72033
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/72033
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/72033
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1268622
dc.descriptionThe authors have calculated the electronic structure for type-II InP/GaAs quantum dot systems considering a three-dimensional geometry including the wetting layer and the electron-hole interaction, which is the only responsible for the hole localization. Their results for the InP/GaAs structure show the electron confined inside the dot and the hole in the GaAs layer, partially above and below the dot. The authors propose structures with InGaAs or InGaP layers, where the hole wave function forms a ring around the dot walls. The electron-hole overlap, and therefore, the carrier lifetimes are very sensitive to the structural geometry, which is an important tool for device engineering. (c) 2007 American Institute of Physics.
dc.description90
dc.description21
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationApplied Physics Letters
dc.relationAppl. Phys. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.titleSpatially indirect excitons in type-II quantum dots
dc.typeArtículos de revistas


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