Brasil | Artículos de revistas
dc.creatorKOROPECKI, RR
dc.creatorALVAREZ, F
dc.creatorARCE, R
dc.date1991
dc.date37043
dc.date2014-12-16T11:36:46Z
dc.date2015-11-26T16:25:15Z
dc.date2014-12-16T11:36:46Z
dc.date2015-11-26T16:25:15Z
dc.date.accessioned2018-03-28T23:06:02Z
dc.date.available2018-03-28T23:06:02Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 69, n. 11, n. 7805, n. 7811, 1991.
dc.identifier0021-8979
dc.identifierWOS:A1991FP40100064
dc.identifier10.1063/1.347509
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/80541
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/80541
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/80541
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1268587
dc.descriptionAmorphous silicon carbide (a-Si1-xCx:H) samples having x less-than-or-equal-to 0.4 were studied by infrared and visible spectroscopy. Treatment by factor analysis of the 2000-2100 cm-1 absorption band of the spectra allows us to interpret this particular vibrational mode in terms of only two independent contributions. The analysis shows that polarization inductive shifting is not significant. An IR study of the evolution of this band during oxidation of porous samples was also performed. All the experimental evidence indicates that the growth of free volumes induced by the presence of carbon plays the most important role in the behavior of the 2000-2100 cm-1 band upon stoichiometric variations.
dc.description69
dc.description11
dc.description7805
dc.description7811
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherWoodbury
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectHydrogenated Amorphous-silicon
dc.subjectVibrational-spectra
dc.subjectAlloys
dc.subjectFrequencies
dc.subjectFilms
dc.titleINFRARED STUDY OF THE SI-H STRETCHING BAND IN A-SIC-H
dc.typeArtículos de revistas


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