dc.creator | Dias, IFL | |
dc.creator | Duarte, JL | |
dc.creator | Laureto, E | |
dc.creator | Gelamo, RV | |
dc.creator | Menezes, EA | |
dc.creator | Harmand, JC | |
dc.date | 2000 | |
dc.date | JUL | |
dc.date | 2014-12-02T16:25:49Z | |
dc.date | 2015-11-26T16:21:28Z | |
dc.date | 2014-12-02T16:25:49Z | |
dc.date | 2015-11-26T16:21:28Z | |
dc.date.accessioned | 2018-03-28T23:03:28Z | |
dc.date.available | 2018-03-28T23:03:28Z | |
dc.identifier | Superlattices And Microstructures. Academic Press Ltd, v. 28, n. 1, n. 29, n. 33, 2000. | |
dc.identifier | 0749-6036 | |
dc.identifier | WOS:000088722500003 | |
dc.identifier | 10.1006/spmi.2000.0847 | |
dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65442 | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/65442 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/65442 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1267956 | |
dc.description | We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy, A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 mu m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm(-2) is observed for a mean electron concentration of about 5.5 x 10(18) cm(-3). The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed. (C) 2000 Academic Press. | |
dc.description | 28 | |
dc.description | 1 | |
dc.description | 29 | |
dc.description | 33 | |
dc.language | en | |
dc.publisher | Academic Press Ltd | |
dc.publisher | London | |
dc.publisher | Inglaterra | |
dc.relation | Superlattices And Microstructures | |
dc.relation | Superlattices Microstruct. | |
dc.rights | fechado | |
dc.source | Web of Science | |
dc.subject | semiconductor | |
dc.subject | digital alloy | |
dc.subject | Brag mirror | |
dc.subject | Wavelength | |
dc.title | Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP | |
dc.type | Artículos de revistas | |