dc.creatorDias, IFL
dc.creatorDuarte, JL
dc.creatorLaureto, E
dc.creatorGelamo, RV
dc.creatorMenezes, EA
dc.creatorHarmand, JC
dc.date2000
dc.dateJUL
dc.date2014-12-02T16:25:49Z
dc.date2015-11-26T16:21:28Z
dc.date2014-12-02T16:25:49Z
dc.date2015-11-26T16:21:28Z
dc.date.accessioned2018-03-28T23:03:28Z
dc.date.available2018-03-28T23:03:28Z
dc.identifierSuperlattices And Microstructures. Academic Press Ltd, v. 28, n. 1, n. 29, n. 33, 2000.
dc.identifier0749-6036
dc.identifierWOS:000088722500003
dc.identifier10.1006/spmi.2000.0847
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65442
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/65442
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65442
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1267956
dc.descriptionWe report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy, A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 mu m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm(-2) is observed for a mean electron concentration of about 5.5 x 10(18) cm(-3). The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed. (C) 2000 Academic Press.
dc.description28
dc.description1
dc.description29
dc.description33
dc.languageen
dc.publisherAcademic Press Ltd
dc.publisherLondon
dc.publisherInglaterra
dc.relationSuperlattices And Microstructures
dc.relationSuperlattices Microstruct.
dc.rightsfechado
dc.sourceWeb of Science
dc.subjectsemiconductor
dc.subjectdigital alloy
dc.subjectBrag mirror
dc.subjectWavelength
dc.titleElectrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP
dc.typeArtículos de revistas


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