| dc.creator | Balachova, O | |
| dc.creator | Braga, ES | |
| dc.date | 2003 | |
| dc.date | SEP | |
| dc.date | 2014-11-16T08:06:02Z | |
| dc.date | 2015-11-26T16:21:10Z | |
| dc.date | 2014-11-16T08:06:02Z | |
| dc.date | 2015-11-26T16:21:10Z | |
| dc.date.accessioned | 2018-03-28T23:03:15Z | |
| dc.date.available | 2018-03-28T23:03:15Z | |
| dc.identifier | Microelectronics Journal. Elsevier Advanced Technology, v. 34, n. 9, n. 877, n. 880, 2003. | |
| dc.identifier | 0026-2692 | |
| dc.identifier | WOS:000184400500016 | |
| dc.identifier | 10.1016/S0026-2692(03)00008-9 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/72295 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/72295 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/72295 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1267908 | |
| dc.description | Capacitance-voltage (C-V) characteristics of the as-grown metal (M)-carbon-oxide(SiO2)-semiconductor(Si) structures are examined at the frequency of I MHz and compared with the C-V characteristics of the conventional metal(Al)-SiO2-Si (MOS) Structures. The density of the oxide charge Q(o)/q is extracted from the experimental results. Q(o)/q was found to be I x 10(12) cm(-2) for the MOS structures and 7 X 10(11) cm(-2) for the metal-carbon-oxide-silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers. (C) 2003 Elsevier Science Ltd. All rights reserved. | |
| dc.description | 34 | |
| dc.description | 9 | |
| dc.description | 877 | |
| dc.description | 880 | |
| dc.language | en | |
| dc.publisher | Elsevier Advanced Technology | |
| dc.publisher | Oxford | |
| dc.publisher | Inglaterra | |
| dc.relation | Microelectronics Journal | |
| dc.relation | Microelectron. J. | |
| dc.rights | fechado | |
| dc.rights | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
| dc.source | Web of Science | |
| dc.subject | amorphous hydrogenated carbon | |
| dc.subject | C-V measurements | |
| dc.subject | oxide trapped charge | |
| dc.subject | Plasma | |
| dc.subject | Deposition | |
| dc.subject | Hard | |
| dc.subject | Growth | |
| dc.title | The protective effect of thin amorphous hydrogenated carbon a-C : H films during metallisation of metal-carbon-oxide-silicon (MCOS) diodes | |
| dc.type | Artículos de revistas | |
