Interplay between direct gap renormalization and intervalley scattering in AlxGa1-xAs near the Gamma-X crossover

dc.creatorAndrade, LHF
dc.creatorMarotti, RE
dc.creatorQuivy, AA
dc.creatorCruz, CHD
dc.date2002
dc.date2014-11-16T03:55:21Z
dc.date2015-11-26T16:19:23Z
dc.date2014-11-16T03:55:21Z
dc.date2015-11-26T16:19:23Z
dc.date.accessioned2018-03-28T23:02:24Z
dc.date.available2018-03-28T23:02:24Z
dc.identifierSolid State Communications. Pergamon-elsevier Science Ltd, v. 121, n. 4, n. 181, n. 185, 2002.
dc.identifier0038-1098
dc.identifierWOS:000173598600004
dc.identifier10.1016/S0038-1098(01)00480-X
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/60482
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/60482
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/60482
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1267694
dc.descriptionWe report resonant pump and white probe femtosecond spectroscopy in the Al0.42Ga0.58As multivalley semiconductor. For this alloy composition the energy valleys are near the Gamma-X crossover. Our most interesting result refers to the differential transmission below gap which shows carrier induced absorption and a complex dynamics. The data can be modeled if we take into account the dependence of the gap renormalization on the occupation of each conduction band valley. We infer an interplay between direct gap renormalization and the ultrafast redistribution of the photoinjected carriers that follows ultrafast intervalley scattering in the scenario of multiple valleys close in energy in the conduction band. This shows on femtosecond timescale the contribution of the electron exchange interaction to the band gap narrowing in highly excited multivalley semiconductors. (C) 2002 Elsevier Science Ltd. All rights reserved.
dc.description121
dc.description4
dc.description181
dc.description185
dc.languageen
dc.publisherPergamon-elsevier Science Ltd
dc.publisherOxford
dc.publisherInglaterra
dc.relationSolid State Communications
dc.relationSolid State Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectsemiconductors
dc.subjectoptical properties
dc.subjecttime-resolved optical spectroscopies
dc.subjectUltrafast Carrier Dynamics
dc.subjectRelaxation Dynamics
dc.subjectBand-edge
dc.subjectAbsorption-spectroscopy
dc.subjectPhotoexcited Carriers
dc.subjectFemtosecond
dc.subjectGaas
dc.subjectGermanium
dc.subjectSemiconductors
dc.subjectKinetics
dc.titleInterplay between direct gap renormalization and intervalley scattering in AlxGa1-xAs near the Gamma-X crossover
dc.typeArtículos de revistas


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