Effects of thermally activated hole escape mechanism on the optical and electrical properties in p-type Si delta-doped GaAs(311)A layers

dc.creatorFrizzarini, M
dc.creatorda Silva, ECF
dc.creatorQuivy, AA
dc.creatorCavalheiro, A
dc.creatorLeite, JR
dc.creatorMeneses, EA
dc.date2000
dc.dateMAY 15
dc.date2014-12-02T16:25:28Z
dc.date2015-11-26T16:17:07Z
dc.date2014-12-02T16:25:28Z
dc.date2015-11-26T16:17:07Z
dc.date.accessioned2018-03-28T23:01:51Z
dc.date.available2018-03-28T23:01:51Z
dc.identifierPhysical Review B. Amer Physical Soc, v. 61, n. 20, n. 13923, n. 13928, 2000.
dc.identifier1098-0121
dc.identifierWOS:000087284900078
dc.identifier10.1103/PhysRevB.61.13923
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/79772
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/79772
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/79772
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1267558
dc.descriptiona series of periodically spaced p-type delta-doped GaAs(311)A layers, with a doping period varying from 100 to 500 Angstrom, was investigated by Hall effect and photoluminescence measurements in the range of 2 up to 280 K. An enhancement of the Hall mobility by a factor of 5 was observed around 100 K for the structure with the largest period with respect to the one with the smallest period. Photoluminescence measurements carried out at different temperatures revealed that the physical origin of the mobility enhancement was related to the escape of confined holes from the two-dimensional hole gas to the undoped GaAs region between delta-doped layers. Both optical and transport data provided strong evidence of the two-dimensional to three-dimensional transition related to the change from isolated delta wells to a superlattice of delta wells characterized by the formation of minibands.
dc.description61
dc.description20
dc.description13923
dc.description13928
dc.languageen
dc.publisherAmer Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review B
dc.relationPhys. Rev. B
dc.rightsaberto
dc.rightshttp://publish.aps.org/authors/transfer-of-copyright-agreement
dc.sourceWeb of Science
dc.subjectMolecular-beam Epitaxy
dc.subjectGaas Structures
dc.subjectPhotoluminescence
dc.subjectSuperlattices
dc.subjectScattering
dc.subjectMobility
dc.subjectWells
dc.titleEffects of thermally activated hole escape mechanism on the optical and electrical properties in p-type Si delta-doped GaAs(311)A layers
dc.typeArtículos de revistas


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