Transient transport in III-nitrides: interplay of momentum and energy relaxation times

dc.creatorRodrigues, CG
dc.creatorVasconcellos, AR
dc.creatorLuzzi, R
dc.creatorFreire, VN
dc.date2007
dc.dateAUG 29
dc.date2014-11-15T18:23:22Z
dc.date2015-11-26T16:12:59Z
dc.date2014-11-15T18:23:22Z
dc.date2015-11-26T16:12:59Z
dc.date.accessioned2018-03-28T23:00:57Z
dc.date.available2018-03-28T23:00:57Z
dc.identifierJournal Of Physics-condensed Matter. Iop Publishing Ltd, v. 19, n. 34, 2007.
dc.identifier0953-8984
dc.identifierWOS:000254100500003
dc.identifier10.1088/0953-8984/19/34/346214
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/77562
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/77562
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/77562
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1267339
dc.descriptionThe ultrafast transient transport in wide-gap polar III-nitride semiconductors in electric fields is considered. A nonlinear and time-dependent (on the evolution of the nonequilibrium-irreversible thermodynamic state of the system) Drude-like law is derived, with the conductivity related to a so-called transport time (or current characteristic time which is related to a memory-dependent momentum relaxation time). From the collision operators, present in the evolution equations for the carriers' energy and momentum, are obtained quantities playing the role of time-dependent energy and momentum relaxation times. The electron drift velocity overshoot at intermediate-intensity fields in GaN, AlN and InN is evidenced, and its onset is explained as a result of the interplay of momentum and energy relaxation times.
dc.description19
dc.description34
dc.languageen
dc.publisherIop Publishing Ltd
dc.publisherBristol
dc.publisherInglaterra
dc.relationJournal Of Physics-condensed Matter
dc.relationJ. Phys.-Condes. Matter
dc.rightsfechado
dc.rightshttp://iopscience.iop.org/page/copyright
dc.sourceWeb of Science
dc.subjectResolved Electroabsorption Measurement
dc.subjectNonlinear Quantum Transport
dc.subjectElectron Velocity Overshoot
dc.subjectField-effect Transistors
dc.subjectMonte-carlo Calculation
dc.subjectWurtzite Gan
dc.subjectBulk Gan
dc.subjectSemiconductors
dc.subjectMobility
dc.subjectAln
dc.titleTransient transport in III-nitrides: interplay of momentum and energy relaxation times
dc.typeArtículos de revistas


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