On the onset of InAs islanding on InP: influence of surface steps

dc.creatorCotta, MA
dc.creatorMendonca, CAC
dc.creatorMeneses, EA
dc.creatordeCarvalho, MMG
dc.date1997
dc.dateOCT 23
dc.date2014-12-16T11:36:01Z
dc.date2015-11-26T16:10:27Z
dc.date2014-12-16T11:36:01Z
dc.date2015-11-26T16:10:27Z
dc.date.accessioned2018-03-28T22:59:05Z
dc.date.available2018-03-28T22:59:05Z
dc.identifierSurface Science. Elsevier Science Bv, v. 388, n. 41699, n. 84, n. 91, 1997.
dc.identifier0039-6028
dc.identifierWOS:A1997YD09600016
dc.identifier10.1016/S0039-6028(97)00377-4
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/68737
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/68737
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/68737
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1266876
dc.descriptionWe investigate the transition from two- to three-dimensional growth of thin InAs films on InP by chemical beam epitaxy. This transition is shown to strongly depend on growth temperature and on the misorientation-or the presence of surface steps - on the InP surface where the InAs film is deposited. Low temperature photoluminescence measurements on InP-InAs-InP quantum well structures and atomic force microscopy analysis of InAs-InP structures indicate different islanding behaviors for substrates with different misorientations, the onset of islanding process occurring earlier for misoriented than for nominal substrates. The shape and distribution of the islands indicate the existence of a step edge barrier altering the diffusion dynamics on the surface. Low growth temperature is shown to delay islanding for a fixed deposition time and also limit island formation to certain regions of the sample where smooth corrugations (slope similar to 1 degrees) are observed. (C) 1997 Elsevier Science B.V.
dc.description388
dc.description41699
dc.description84
dc.description91
dc.languageen
dc.publisherElsevier Science Bv
dc.publisherAmsterdam
dc.publisherHolanda
dc.relationSurface Science
dc.relationSurf. Sci.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectatomic force microscopy
dc.subjectepitaxy
dc.subjectindium arsenide
dc.subjectindium phosphide
dc.subjectmorphology
dc.subjectphotoluminescence
dc.subjectroughness and topography
dc.subjectsemiconducting films
dc.subjectsurface diffusion
dc.subjectsurface structure
dc.subjectMolecular-beam Epitaxy
dc.subjectVapor-phase-epitaxy
dc.subjectQuantum-wells
dc.subjectThickness
dc.subjectMigration
dc.subjectGrowth
dc.subjectStrain
dc.subjectFilms
dc.subjectGaas
dc.titleOn the onset of InAs islanding on InP: influence of surface steps
dc.typeArtículos de revistas


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