| dc.creator | Reyes-Gomez, E | |
| dc.creator | Raigoza, N | |
| dc.creator | Oliveira, LE | |
| dc.date | 2013 | |
| dc.date | NOV | |
| dc.date | 2014-07-30T14:34:06Z | |
| dc.date | 2015-11-26T16:09:52Z | |
| dc.date | 2014-07-30T14:34:06Z | |
| dc.date | 2015-11-26T16:09:52Z | |
| dc.date.accessioned | 2018-03-28T22:58:29Z | |
| dc.date.available | 2018-03-28T22:58:29Z | |
| dc.identifier | Epl. Epl Association, European Physical Society, v. 104, n. 4, 2013. | |
| dc.identifier | 0295-5075 | |
| dc.identifier | 1286-4854 | |
| dc.identifier | WOS:000328882700022 | |
| dc.identifier | 10.1209/0295-5075/104/47008 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/60518 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/60518 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1266730 | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices. Copyright (C) EPLA, 2013 | |
| dc.description | 104 | |
| dc.description | 4 | |
| dc.description | Scientific Colombian Agency CODI - University of Antioquia | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | FAEPEX-UNICAMP | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | FAPESP [2012/51691-0] | |
| dc.language | en | |
| dc.publisher | Epl Association, European Physical Society | |
| dc.publisher | Mulhouse | |
| dc.publisher | França | |
| dc.relation | Epl | |
| dc.relation | EPL | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Fibonacci Superlattices | |
| dc.subject | States | |
| dc.title | Intraband absorption in GaAs-(Ga,Al) As variably spaced semiconductor superlattices under crossed electric and magnetic fields | |
| dc.type | Artículos de revistas | |
