dc.creatorDias, JAS
dc.date2005
dc.date2014-11-14T19:46:09Z
dc.date2015-11-26T16:08:13Z
dc.date2014-11-14T19:46:09Z
dc.date2015-11-26T16:08:13Z
dc.date.accessioned2018-03-28T22:56:46Z
dc.date.available2018-03-28T22:56:46Z
dc.identifierAeu-international Journal Of Electronics And Communications. Elsevier Gmbh, Urban & Fischer Verlag, v. 59, n. 8, n. 483, n. 485, 2005.
dc.identifier1434-8411
dc.identifierWOS:000234430100008
dc.identifier10.1016/j.aeure.2005.01.010
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/81860
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/81860
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/81860
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1266302
dc.descriptionA very simple subcircuit model for SPICE simulation of bipolar transistors affected by the avalanche multiplication mechanism is presented. The currently available models for bipolar transistors in circuit simulators do not consider this effect, which can lead to serious simulation errors when high-frequency thin basewidths transistors with low and soft breakdown voltages are simulated. The simulated results predicted by SPICE with the proposed subcircuit are compared with the measured data obtained from several transistors with low and soft breakdown voltages and a good agreement is reported. (c) 2005 Elsevier GmbH. All rights reserved.
dc.description59
dc.description8
dc.description483
dc.description485
dc.languageen
dc.publisherElsevier Gmbh, Urban & Fischer Verlag
dc.publisherJena
dc.publisherAlemanha
dc.relationAeu-international Journal Of Electronics And Communications
dc.relationAEU-Int. J. Electron. Commun.
dc.rightsfechado
dc.rightshttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.sourceWeb of Science
dc.subjectavalanche multiplication
dc.subjectSPICE simulation
dc.subjecthigh-frequency transistors
dc.subjectthin basewidth transistors
dc.subjectlow breakdown voltage transistors
dc.titleOn the avalanche multiplication mechanism in SPICE simulations of high-frequency bipolar transistors with thin basewidths and low breakdown voltages
dc.typeArtículos de revistas


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