dc.creator | Dias, JAS | |
dc.date | 2005 | |
dc.date | 2014-11-14T19:46:09Z | |
dc.date | 2015-11-26T16:08:13Z | |
dc.date | 2014-11-14T19:46:09Z | |
dc.date | 2015-11-26T16:08:13Z | |
dc.date.accessioned | 2018-03-28T22:56:46Z | |
dc.date.available | 2018-03-28T22:56:46Z | |
dc.identifier | Aeu-international Journal Of Electronics And Communications. Elsevier Gmbh, Urban & Fischer Verlag, v. 59, n. 8, n. 483, n. 485, 2005. | |
dc.identifier | 1434-8411 | |
dc.identifier | WOS:000234430100008 | |
dc.identifier | 10.1016/j.aeure.2005.01.010 | |
dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/81860 | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/81860 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/81860 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1266302 | |
dc.description | A very simple subcircuit model for SPICE simulation of bipolar transistors affected by the avalanche multiplication mechanism is presented. The currently available models for bipolar transistors in circuit simulators do not consider this effect, which can lead to serious simulation errors when high-frequency thin basewidths transistors with low and soft breakdown voltages are simulated. The simulated results predicted by SPICE with the proposed subcircuit are compared with the measured data obtained from several transistors with low and soft breakdown voltages and a good agreement is reported. (c) 2005 Elsevier GmbH. All rights reserved. | |
dc.description | 59 | |
dc.description | 8 | |
dc.description | 483 | |
dc.description | 485 | |
dc.language | en | |
dc.publisher | Elsevier Gmbh, Urban & Fischer Verlag | |
dc.publisher | Jena | |
dc.publisher | Alemanha | |
dc.relation | Aeu-international Journal Of Electronics And Communications | |
dc.relation | AEU-Int. J. Electron. Commun. | |
dc.rights | fechado | |
dc.rights | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
dc.source | Web of Science | |
dc.subject | avalanche multiplication | |
dc.subject | SPICE simulation | |
dc.subject | high-frequency transistors | |
dc.subject | thin basewidth transistors | |
dc.subject | low breakdown voltage transistors | |
dc.title | On the avalanche multiplication mechanism in SPICE simulations of high-frequency bipolar transistors with thin basewidths and low breakdown voltages | |
dc.type | Artículos de revistas | |