Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

dc.creatorMogilevtsev, D
dc.creatorNisovtsev, AP
dc.creatorKilin, S
dc.creatorCavalcanti, SB
dc.creatorBrandi, HS
dc.creatorOliveira, LE
dc.date2009
dc.dateFEB 4
dc.date2014-11-14T18:40:28Z
dc.date2015-11-26T16:07:47Z
dc.date2014-11-14T18:40:28Z
dc.date2015-11-26T16:07:47Z
dc.date.accessioned2018-03-28T22:56:27Z
dc.date.available2018-03-28T22:56:27Z
dc.identifierJournal Of Physics-condensed Matter. Iop Publishing Ltd, v. 21, n. 5, 2009.
dc.identifier0953-8984
dc.identifierWOS:000262375100021
dc.identifier10.1088/0953-8984/21/5/055801
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62046
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/62046
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/62046
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1266221
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionA systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.
dc.description21
dc.description5
dc.descriptionEU [6FP IST-034368]
dc.descriptionINTAS
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionMCT-Institute of Millennium for Quantum Computing
dc.descriptionInstitute of Millennium for Nanotechnology
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionEU [6FP IST-034368]
dc.languageen
dc.publisherIop Publishing Ltd
dc.publisherBristol
dc.publisherInglaterra
dc.relationJournal Of Physics-condensed Matter
dc.relationJ. Phys.-Condes. Matter
dc.rightsfechado
dc.rightshttp://iopscience.iop.org/page/copyright
dc.sourceWeb of Science
dc.subjectMaster-equations
dc.subjectPerturbations
dc.titleNon-Markovian damping of Rabi oscillations in semiconductor quantum dots
dc.typeArtículos de revistas


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