Artículos de revistas
Scaling laws in etched Si surfaces
Registro en:
Physical Review B. American Physical Soc, v. 65, n. 24, 2002.
1098-0121
WOS:000177043100082
10.1103/PhysRevB.65.245323
Autor
Dotto, MER
Kleinke, MU
Institución
Resumen
Self-affine scaling behavior of etched crystalline Si surfaces has been investigated by atomic force microscope. Si surfaces were etched by a small drop (a few muL) of NaOH solution. Percolation characteristics were observed at the initial stages of Si(100) chemical etching. Roughness exponent (alpha) values increase with etching time, from 0.6 to 0.8, and the alpha functional behavior with respect to the etching power agrees with the Kessler-Levine-Tu model. Anomalous scaling behavior was characterized for etched Si(111) surfaces. The local value of the roughness exponent is associated to the diffusional process of plateau growth. The global value of alpha is close to 0.4, a typical value for the Kardar-Parisi-Zang model, reflecting the highest growth rates on surfaces with higher slopes. 65 24