Actas de congresos
Temperature Independent Er3+ Photoluminescence Lifetime In A-si:h<er> And A-siox:h<er>
Registro en:
Materials Science And Engineering B: Solid-state Materials For Advanced Technology. , v. 105, n. 01/03/15, p. 165 - 168, 2003.
9215107
10.1016/j.mseb.2003.08.038
2-s2.0-0345447559
Autor
Tessler L.R.
Biggemann D.
Institución
Resumen
The photoluminescence (PL) lifetime of Er3+ in a-Si:H<Er> and a-SiOx:H<Er> was measured between 15 and 300K in a set of samples containing ∼1 at.% Er and up to ∼10 at.% O. The room temperature PL intensity increased and the temperature quenching decreased with O content. The maximum PL intensity at 15K, however, is obtained from samples with no intentional oxygen added. The PL lifetimes were obtained using the quadrature frequency resolved spectroscopy (QFRS) technique. The QFRS signal was well fitted supposing two lifetimes, the fast decay in the 20-150μs range and the slow decay in the 200-830μs range, consistently increasing with the O content of the samples. For all samples both the fast and the slow lifetimes did not depend on the temperature within experimental incertitude. Our results are interpreted supposing two different lattice sites for Er 3+ in the hosts. Moreover, the de-excitation of the Er3+ ions by multiple phonon emission is negligible in this class of materials. © 2003 Published by Elsiver B.V. 105 01/03/15 165 168 (2001) Mater. Sci. Eng. B, 81 Tessler, L.R., (1999) Braz. J. Phys., 29, p. 616 Bressler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Sturm, A., (1995) Appl. Phys. Lett., 67, p. 3599 Fuhs, W., Ulber, I., Weiser, G., Bresler, M.S., Gusev, O.B., Kusnetsov, A.N., Kudoyarova, V.K., Yassievich, I.N., (1997) Phys. Rev. B, 56, p. 9545 Kuhne, H., Weiser, G., Terukov, E.I., Kusnetsov, A.N., Kudoyarova, V.K., (1999) J. Appl. Phys., 86, p. 896 Bresler, M.S., Gusev, O.B., Sobolev, N.A., Terukov, E.I., Yassievich, I.N., Zakharchenya, B.P., Gregorkevich, T., (1999) Phys. Sol. State, 41, p. 770 Tessler, L.R., Iñiguez, A.C., (1998) Mater. Res. Soc. Symp. Proc., MRS, 507, p. 279. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Amorphous and Microcrystalline Silicon Technology, Pittsburgh, PA Depinna, S.P., Dunstan, D.J., (1984) Phil. Mag. B, 50, p. 579 Tessler, L.R., Iñiguez, A.C., (1998) Mat. Res. Soc. Proc., 507, pp. 505-517. , S. Wagner, M. Hack, H.M. Branz, R. Schroop, I. Shimizu (Eds.), Amorphous and Microcrystalline Silicon Technology, Pittsburgh Kamenev, B.V., Timoshenko, V.Y., Konstantinova, E.A., Kudoyarova, V.K., Terukov, E.I., Kashkarov, P.K., (2002) J. Non-cryst. Sol., 299, p. 668 Van Den Hoven, G.N., Shin, J.H., Polman, A., Lombardo, S., Campisano, S.U., (1995) J. Appl. Phys., 78, p. 2642 Piamonteze, C., Iñiguez, A.C., Tessler, L.R., Martins, M.C., Tolentino, H., (1998) Phys. Rev. Lett., 81, p. 4652 Terukov, E.I., Undalov, Yu.K., Kudoyarova, V.Kh., Koughia, K.V., Kleider, J.P., Gueunier, M.E., Meaudre, R., (2002) J. Non-cryst. Sol., 299-302, p. 699 Shin, J.H., Serna, R., Van Den Hoven, G.N., Polman, A., Van Sark, W.G.J.H.M., Vredenberg, A.M., (1996) Appl. Phys. Lett., 68, p. 997 Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University Press, Cambridge