Silicon Nitride Etching In High- And Low-density Plasmas Using Sf6/o2/n2 Mixtures

dc.creatorReyes-Betanzo C.
dc.creatorMoshkalyov S.A.
dc.creatorSwart J.W.
dc.creatorRamos A.C.S.
dc.date2003
dc.date2015-06-30T17:29:29Z
dc.date2015-11-26T15:41:40Z
dc.date2015-06-30T17:29:29Z
dc.date2015-11-26T15:41:40Z
dc.date.accessioned2018-03-28T22:50:12Z
dc.date.available2018-03-28T22:50:12Z
dc.identifier
dc.identifierJournal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films. , v. 21, n. 2, p. 461 - 469, 2003.
dc.identifier7342101
dc.identifier10.1116/1.1547703
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0037349933&partnerID=40&md5=fb39ca2b83fb904dcc7595fdbc19d3d1
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/102264
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/102264
dc.identifier2-s2.0-0037349933
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1264675
dc.descriptionSilicon nitride etching in high- and low-density plasmas was shown using SF6/O2/N2 mixtures. The kinetics of formation of NO molecules was analyzed using optical emission spectroscopy. Lower selectivities were obtained using the capacitively coupled rf plasma source. Higher NO generation was found in a high-density electron cyclotron resonance (ECR) plasma, while using a O2/N2 mixture.
dc.description21
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dc.description469
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dc.languageen
dc.publisher
dc.relationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.rightsaberto
dc.sourceScopus
dc.titleSilicon Nitride Etching In High- And Low-density Plasmas Using Sf6/o2/n2 Mixtures
dc.typeArtículos de revistas


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