dc.creatorTessler L.R.
dc.creatorWang Q.
dc.creatorBranz H.M.
dc.date2003
dc.date2015-06-30T17:27:21Z
dc.date2015-11-26T15:39:39Z
dc.date2015-06-30T17:27:21Z
dc.date2015-11-26T15:39:39Z
dc.date.accessioned2018-03-28T22:48:08Z
dc.date.available2018-03-28T22:48:08Z
dc.identifier
dc.identifierThin Solid Films. , v. 430, n. 01/02/15, p. 83 - 86, 2003.
dc.identifier406090
dc.identifier10.1016/S0040-6090(03)00077-4
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0038147219&partnerID=40&md5=6b0a8fade1b664b202be9f02723b2a19
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/102056
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/102056
dc.identifier2-s2.0-0038147219
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1264188
dc.descriptionWe report a synchrotron X-ray absorption spectroscopy study of the average neighborhood of Si near the transition from a-Si:H to μc-Si on wedge-shaped samples prepared by hot-wire CVD in a chamber using a movable shutter. The thickness of the wedge varies from 30 to 160 nm. Nucleation of μc-Si occurs at a critical thickness of approximately 100 nm. X-Ray absorption was measured at the Si K-edge (1.84 keV) by total electron photoemission yield. The absorption oscillations in the EXAFS region are very similar to all along the wedge. Analysis indicates an average tetrahedral first neighbor shell with radial disorder decreasing with crystallization. In the near-edge (XANES) region multiple scattering effects appear at the onset of crystallinity. Unlike single crystal silicon, these effects involve only double scattering within the first neighbor shell, indicating an ill-formed second shell in μc-Si. © 2003 Elsevier Science B.V. All rights reserved.
dc.description430
dc.description01/02/15
dc.description83
dc.description86
dc.descriptionKoh, J., Lee, Y., Fujiwara, H., Wronski, C.R., Collins, R.W., (1998) Appl. Phys. Lett., 73, p. 1526
dc.descriptionWang, Q., Perkins, J., Moutinho, H., To, B., Branz, H., (2002) Materials Research Society Symposium Proceedings, 715, pp. A171. , J.R. Abelson, J.B. Boyce, J.D. Cohen, H. Matsumara, & J. Robertson, Amorphous and Heterogeneous Silicon-Based Films, San Francisco, U.S.A
dc.descriptionBianconi, A., Di Cicco, N., Pavel, V., Benfatto, M., Marcelli, A., Natoli, C.R., Pianetta, P., Woicik, J., (1987) Phys. Rev. B, 36, p. 6426
dc.descriptionLytle, F.W., Sayers, D.E., Stern, E.A., (1989) Physica B, 158, p. 701
dc.descriptionRehr, J.J., Albers, R.C., (2000) Rev. Mod. Phys., 72, p. 621
dc.languageen
dc.publisher
dc.relationThin Solid Films
dc.rightsfechado
dc.sourceScopus
dc.titleThe Silicon Neighborhood Across The A-si:h To μc-si Transition By X-ray Absorption Spectroscopy (xas)
dc.typeActas de congresos


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