| dc.creator | Chambouleyron I. | |
| dc.creator | Fajardo F. | |
| dc.creator | Zanatta A.R. | |
| dc.date | 2002 | |
| dc.date | 2015-06-30T16:45:26Z | |
| dc.date | 2015-11-26T15:37:32Z | |
| dc.date | 2015-06-30T16:45:26Z | |
| dc.date | 2015-11-26T15:37:32Z | |
| dc.date.accessioned | 2018-03-28T22:45:57Z | |
| dc.date.available | 2018-03-28T22:45:57Z | |
| dc.identifier | | |
| dc.identifier | Journal Of Non-crystalline Solids. , v. 299-302, n. PART 1, p. 143 - 147, 2002. | |
| dc.identifier | 223093 | |
| dc.identifier | 10.1016/S0022-3093(01)00999-1 | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-0036540514&partnerID=40&md5=1ec9ce552267ef356f01a484837901a1 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/101962 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/101962 | |
| dc.identifier | 2-s2.0-0036540514 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1263666 | |
| dc.description | Raman and infrared spectroscopies have been used to study the crystallization of sputtered hydrogenated amorphous germanium (a-Ge:H) films induced by variable amounts of aluminum. Under the selected deposition conditions Al induces the partial crystallization of Ge films deposited onto crystalline silicon substrates. The analysis of experimental data indicates that Al atoms play a key role in the process. The comparison with data on the local order and coordination of Ga atoms in a-Ge:H suggests that fourfold coordinated Al atoms sitting at the center of tetrahedral sites act as crystallization seeds. © 2002 Elsevier Science B.V. All rights reserved. | |
| dc.description | 299-302 | |
| dc.description | PART 1 | |
| dc.description | 143 | |
| dc.description | 147 | |
| dc.description | Konno, T.J., Sinclair, R., (1994) Mater. Sci. Eng. A, 179-180, p. 426. , and references therein | |
| dc.description | Oki, F., Ogawa, Y., Fujiki, Y., (1969) Jpn. J. Appl. Phys., 8, p. 1056 | |
| dc.description | Blum, N.A., Feldman, C., (1976) J. Non-Cryst. Solids, 22, p. 29 | |
| dc.description | Katsuki, F., Hanafusa, K., Yonemura, M., Koyama, T., Doi, M., (2001) J. Appl. Phys., 89, p. 4643 | |
| dc.description | Bermejo, D., Cardona, M., (1979) J. Non-Cryst. Solids, 32, p. 421 | |
| dc.description | Turan, R., Perovic, D.D., Houghton, D.C., (1996) Appl. Phys. Lett., 69, p. 1593 | |
| dc.description | Dos Santos, D.R., Torriani, I., (1993) Solid State Commun., 85, p. 307 | |
| dc.description | Chambouleyron, I., Fajardo, F., Zanatta, A.R., (2001) Appl. Phys. Lett., 79, p. 3233 | |
| dc.description | Dalba, G., Fornasini, P., Grisenti, R., Rocca, F., Comedi, D., Chambouleyron, I., (1999) Appl. Phys. Lett., 74, p. 281 | |
| dc.description | Pauling, L., (1960) The Nature of the Chemical Bond, 3rd Ed., , Cornell University, New York | |
| dc.description | Chambouleyron, I., Comedi, D., Dalba, G., Fornasini, P., Grisenti, R., Rocca, F., (2000) J. Non-Cryst. Solids, 266, p. 726 | |
| dc.description | Chambouleyron, I., Comedi, D., (1998) J. Non-Cryst. Solids, 227-230, p. 411 | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | Journal of Non-Crystalline Solids | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | Microscopic Mechanisms Behind The Al-induced Crystallization Of A-ge:h Films | |
| dc.type | Actas de congresos | |
