dc.creatorChambouleyron I.
dc.creatorFajardo F.
dc.creatorZanatta A.R.
dc.date2002
dc.date2015-06-30T16:45:26Z
dc.date2015-11-26T15:37:32Z
dc.date2015-06-30T16:45:26Z
dc.date2015-11-26T15:37:32Z
dc.date.accessioned2018-03-28T22:45:57Z
dc.date.available2018-03-28T22:45:57Z
dc.identifier
dc.identifierJournal Of Non-crystalline Solids. , v. 299-302, n. PART 1, p. 143 - 147, 2002.
dc.identifier223093
dc.identifier10.1016/S0022-3093(01)00999-1
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0036540514&partnerID=40&md5=1ec9ce552267ef356f01a484837901a1
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/101962
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/101962
dc.identifier2-s2.0-0036540514
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1263666
dc.descriptionRaman and infrared spectroscopies have been used to study the crystallization of sputtered hydrogenated amorphous germanium (a-Ge:H) films induced by variable amounts of aluminum. Under the selected deposition conditions Al induces the partial crystallization of Ge films deposited onto crystalline silicon substrates. The analysis of experimental data indicates that Al atoms play a key role in the process. The comparison with data on the local order and coordination of Ga atoms in a-Ge:H suggests that fourfold coordinated Al atoms sitting at the center of tetrahedral sites act as crystallization seeds. © 2002 Elsevier Science B.V. All rights reserved.
dc.description299-302
dc.descriptionPART 1
dc.description143
dc.description147
dc.descriptionKonno, T.J., Sinclair, R., (1994) Mater. Sci. Eng. A, 179-180, p. 426. , and references therein
dc.descriptionOki, F., Ogawa, Y., Fujiki, Y., (1969) Jpn. J. Appl. Phys., 8, p. 1056
dc.descriptionBlum, N.A., Feldman, C., (1976) J. Non-Cryst. Solids, 22, p. 29
dc.descriptionKatsuki, F., Hanafusa, K., Yonemura, M., Koyama, T., Doi, M., (2001) J. Appl. Phys., 89, p. 4643
dc.descriptionBermejo, D., Cardona, M., (1979) J. Non-Cryst. Solids, 32, p. 421
dc.descriptionTuran, R., Perovic, D.D., Houghton, D.C., (1996) Appl. Phys. Lett., 69, p. 1593
dc.descriptionDos Santos, D.R., Torriani, I., (1993) Solid State Commun., 85, p. 307
dc.descriptionChambouleyron, I., Fajardo, F., Zanatta, A.R., (2001) Appl. Phys. Lett., 79, p. 3233
dc.descriptionDalba, G., Fornasini, P., Grisenti, R., Rocca, F., Comedi, D., Chambouleyron, I., (1999) Appl. Phys. Lett., 74, p. 281
dc.descriptionPauling, L., (1960) The Nature of the Chemical Bond, 3rd Ed., , Cornell University, New York
dc.descriptionChambouleyron, I., Comedi, D., Dalba, G., Fornasini, P., Grisenti, R., Rocca, F., (2000) J. Non-Cryst. Solids, 266, p. 726
dc.descriptionChambouleyron, I., Comedi, D., (1998) J. Non-Cryst. Solids, 227-230, p. 411
dc.languageen
dc.publisher
dc.relationJournal of Non-Crystalline Solids
dc.rightsfechado
dc.sourceScopus
dc.titleMicroscopic Mechanisms Behind The Al-induced Crystallization Of A-ge:h Films
dc.typeActas de congresos


Este ítem pertenece a la siguiente institución