Hard A-c:h Films Deposited At High Deposition Rates

dc.creatorMarques F.C.
dc.creatorLacerda R.G.
dc.creatorDe Lima Jr. M.M.
dc.creatorVilcarromero J.
dc.date1999
dc.date2015-06-30T15:18:54Z
dc.date2015-11-26T15:23:44Z
dc.date2015-06-30T15:18:54Z
dc.date2015-11-26T15:23:44Z
dc.date.accessioned2018-03-28T22:32:36Z
dc.date.available2018-03-28T22:32:36Z
dc.identifier
dc.identifierThin Solid Films. , v. 343-344, n. 1-2, p. 222 - 225, 1999.
dc.identifier406090
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0032650292&partnerID=40&md5=2dea98864200c4254fea09463f505c21
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/100854
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/100854
dc.identifier2-s2.0-0032650292
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1260519
dc.descriptionIn this work, we present hard-hydrogenated amorphous carbon films at high deposition rate. The films were prepared on the cathode electrode of a conventional r.f. sputtering system. Hydrogenated amorphous carbon films with excellent properties, i.e, high hardness (15 GPa), relatively low stress (∼1.3 GPa) and with a very high deposition rate (∼0.7 nm/s) were obtained at the conditions of high bias (-800 V) and high methane gas pressure (0.12 × 10-1 mbar). The low band gap and the high ID/IG Raman ratio indicate that the films have high amount of sp2 sites. © 1999 Elsevier Science S.A. All rights reserved.
dc.description343-344
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dc.description222
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dc.languageen
dc.publisher
dc.relationThin Solid Films
dc.rightsfechado
dc.sourceScopus
dc.titleHard A-c:h Films Deposited At High Deposition Rates
dc.typeArtículos de revistas


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