Artículos de revistas
Heat Source Distribution, Vertical Structure, And Coating Influences On The Temperature Of Operating 0.98 μm Laser Diodes: Photothermal Reflectance Measurements
Registro en:
Journal Of Applied Physics. , v. 84, n. 7, p. 3491 - 3499, 1998.
218979
2-s2.0-0032184633
Autor
Dacal L.C.O.
Mansanares A.M.
Da Silva E.C.
Institución
Resumen
In the present work single-quantum-well laser diodes operating at 0.98 μm are investigated by photothermal reflectance microscopy. Temperature maps were obtained for the output facet of all devices studied. Furthermore, the temperature distribution was determined along the cavity (on the ridge) of lasers soldered with the junction side up. Near the facets, the measured temperature was found to be about seven times the bulk's temperature, indicating the presence of an important surface heat source. The signal phase distribution of the laser facet shows the important role of the vertical structure on the heat confinement. Comparison between experiments and calculations shows that the confinement layers (GaAlAs and GaInP) thermal parameters are the principal responsible for the heat propagation in these structures near the active region. The same calculations show the role of the coating (Al2O3) in the heat propagation, and give a quantitative ratio between surface and bulk heat sources. Measurements made on the facet and on the ridge as a function of injection current were found to present a quite similar behavior, leading to the conclusion that thermal effects are strongly dominant in these measurements, masking any carrier or electroreflectance effects. Finally, measurements made under different light output power conditions and under the same injection current conditions showed that the surface heat source is caused by laser light absorption at the facets. © 1998 American Institute of Physics. 84 7 3491 3499 Eliseev, P.G., (1996) Quantum Electron., 20, p. 1 Epperlein, P.W., (1993) Jpn. J. Appl. Phys., Part 1, 32, p. 5514 Mansanares, A.M., Fournier, D., Boccara, A.C., (1993) Electron. Lett., 29, p. 2045 Mansanares, A.M., Roger, J.P., Fournier, D., Boccara, A.C., (1994) Appl. Phys. Lett., 64, p. 4 Voigt, P., Hartmann, J., Reichling, M., (1996) J. Appl. Phys., 80, p. 2013 Batista, J.A., Mansanares, A.M., Da Silva, E.C., Fournier, D., (1997) J. Appl. Phys., 82, p. 423 Rosencwaig, A., Thermal wave characterization and inspection of semiconductor materials and devices (1987) Photoacoustic and Thermal Wave Phenomena in Semiconductors, pp. 97-135. , edited by A. Mandelis North-Holland, New York Forget, B.C., Fournier, D., Gusev, V.E., (1992) Appl. Phys. Lett., 61, p. 2341 Tang, W.C., Rosen, H.J., Vettiger, P., Webb, D.J., (1991) Appl. Phys. Lett., 59, p. 1005 Nakwaski, W., (1988) J. Appl. Phys., 64, p. 159 Cherrak, R., Roger, J.P., Fournier, D., Mansanares, A.M., (1996) Prog. Nat. Sci., 6, pp. S-535 Klocek, P., (1991) Handbook of Infrared Optical Materials, , Marcel Dekker, Inc., New York Epperlein, P.W., Bona, G.L., (1993) Appl. Phys. Lett., 62, p. 3074