Artículos de revistas
Nitrogen In Germanium
Registration in:
Journal Of Applied Physics. , v. 84, n. 1, p. 1 - 30, 1998.
218979
2-s2.0-0141610505
Author
Chambouleyron I.
Zanatta A.R.
Institutions
Abstract
The known properties of nitrogen as an impurity in, and as an alloy element of, the germanium network are reviewed in this article. Amorphous and crystalline germanium-nitrogen alloys are interesting materials with potential applications for protective coatings and window layers for solar conversion devices. They may also act as effective diffusion masks for III-V electronic devices. The existing data are compared with similar properties of other group IV nitrides, in particular with silicon nitride. To a certain extent, the general picture mirrors the one found in Si-N systems, as expected from the similar valence structure of both elemental semiconductors. However, important differences appear in the deposition methods and alloy composition, the optical properties of as grown films, and the electrical behavior of nitrogen-doped amorphous layers. Structural studies are reviewed, including band structure calculations and the energies of nitrogen-related defects, which are compared with experimental data. Many important aspects of the electronic structure of Ge-N alloys are not yet completely understood and deserve a more careful investigation, in particular the structure of defects associated with N inclusion. The N doping of the a-Ge:H network appears to be very effective, the activation energy of the most effectively doped samples becoming around 120 meV. This is not the case with N-doped a-Si:H, the reasons for the difference remaining an open question. The lack of data on stoichiometric β-Ge3N4 prevents any reasonable assessment on the possible uses of the alloy in electronic and ceramic applications. © 1998 American Institute of Physics. 84 1 1 30 Cotton, E.A., Wilkinson, G., Gaus, P.L., (1987) Basic Inorganic Chemistry, 2nd Ed., , J. Wiley, New York Harrison, W.A., (1980) Electronic Structure and the Properties of Solids, , W. H. Freeman & Company, San Francisco, CA Sze, S.M., (1981) Physics of Semiconductor Devices, , J. Wiley, New York Strike, S., Morkoç, H., (1992) J. Vac. Sci. Technol. B, 10, p. 1237 Liu, A.Y., Cohen, M.L., (1990) Phys. Rev. B, 41, p. 10727 Morkoç, H., Strike, S., Gao, G.B., Lin, M.E., Sverdlov, B., Burns, M., (1994) J. Appl. Phys., 76, p. 1363 Torriak, J.T., Pan Kove, J.I., Iliopoulos, E., Ng, H.M., Moustakas, T.D., (1998) Appl. Phys. Lett., 72, p. 244 Katz, R.N., (1980) Science, 208, p. 841 Vossen, J.L., Kern, W., (1978) Thin Film Processes, , Academic, New York Silicon Based Ceramics (1995) Mater. Res. Bull., 20 Remy, J.C., Hantzpergue, J.J., (1975) Thin Solid Films, 30, p. 197 (1975) Thin Solid Films, 30, p. 205 Martok, D., Boyd, K.J., Rabalais, J.W., (1995) Int. J. Mod. Phys., 9, p. 3527 Farrer, R.G., (1969) Solid State Commun., 7, p. 685 Nagai, H., Niimi, T., (1968) J. Electrochem. Soc., 115, p. 671 Bagratishvili, G.D., Dzhanelidze, R.B., Kurdiani, N.I., Saksaganskii, D.V., (1976) Phys. Status Solidi A, 36, p. 73 Chambouleyron, I., (1985) Appl. Phys. Lett., 47, p. 117 Maissel, L.I., Glang, R., (1970) Handbook of Thin Film Technology, , McGraw-Hill, New York Klabunde, K.J., (1985) Thin Films from Free Atoms and Particles, , Academic, New York McTaggart, F.K., (1967) Plasma Chemistry in Electrical Discharges, , Elsevier, Amsterdam Hollahan, J.R., Bell, A.T., (1974) Techniques and Applications of Plasma Chemistry, , Wiley Interscience, New York Morosanu, C.-E., (1980) Thin Solid Films, 65, p. 171 Kapoor, V., Stein, H., Silicon Nitride Thin Insulating Films (1983) Proceedings of the Electrochemical Society, 8-83. , The Electrochemical Society, Pennington, NJ Adams, A.C., (1988) Plasma Deposited Thin Films, , edited by J. Mort and F. Jansen CRC, Boca Raton, FL, Chap. 5 Proc. Int Conf. Amorphous Semiconductors (1996) J. Non-Cryst. Solids, 198-200 Marques, F.C., Chambouleyron, I., Evangelisti, F., (1989) J. Non-Cryst. Solids, 114, p. 561 Xu, J., Miyazaki, S., Hirose, M., (1996) Jpn. J. Appl. Phys., Part 1, 35, p. 2043 Xu, J., Chen, K., Feng, D., Miyasaki, S., Hirose, M., (1996) J. Appl. Phys., 80, p. 4703 Alford, D.B., Meiners, L.G., (1987) J. Electrochem. Soc., 134, p. 979 Johnson, G.A., Kapoor, V.J., (1991) J. Appl. Phys., 69, p. 3616 Weissmantel, C., (1976) Thin Solid Films, 32, p. 11 Mogab, C.J., Lugujjo, E., (1976) J. Appl. Phys., 47, p. 1302 Stephens, A.W., Vossen, J.L., Kern, W., (1976) J. Electrochem. Soc., 123, p. 303 Kominiak, G.J., (1975) J. Electrochem. Soc., 122, p. 1271 Chen, P.C.Y., (1974) Thin Solid Films, 21, p. 245 Rothemund, W., Fritzche, C.R., (1973) Thin Solid Films, 15, p. 199 Cordes, L.F., (1967) Appl. Phys. Lett., 11, p. 383 Hu, S.M., Kerr, D.R., Gregor, L.V., (1967) Appl. Phys. Lett., 10, p. 97 Pompei, J., (1967) Proceedings of the Symposium on Deposition Thin Films Sputter, 2nd Ed., p. 127. , University of Rochester Press, Rochester, NY Hantzpergue, J.J., Doucet, Y., Pauleau, Y., Remy, J.C., (1975) Ann. Chim., 10, p. 211. , Paris Zanatta, A.R., Chambouleyron, I., (1993) Phys. Rev. B, 48, p. 4560 Vilcarromero, J., Marques, F.C., (1994) J. Appl. Phys., 76, p. 615 Doo, V.Y., Nichols, D.R., Silvey, G.A., (1966) J. Electrochem. Soc., 113, p. 1279 Doo, V.Y., Kerr, D.R., Nichols, D.R., (1968) J. Electrochem. Soc., 115, p. 61 Roenigk, F., Jensen, K.F., (1987) J. Chem. Soc., 134, p. 1777 Zhang, S.L., Wang, J.T., Kaplan, W., Östling, M., (1992) Thin Solid Films, 213, p. 182 Zhou, N.S., Fujita, S., Sasaki, A., (1985) J. Electron. Mater., 14, p. 55 Thiel, J.A., Hattangady, S.V., Lucovsky, G., (1992) J. Vac. Sci. Technol. A, 10, p. 719 Lee, K.R., Sundaram, K.B., Malocha, D.C., (1993) J. Mater. Sci., 4, p. 283 Samuelson, G.M., Mar, K.M., (1982) J. Electrochem. Soc., 129, p. 1773 Nguyen, V.S., Lanford, W.A., Reiger, A.L., (1986) J. Electrochem. Soc., 133, p. 970 Schuh, H., Schlosser, T., Bissinger, P., Schmidbaur, H., (1993) Z. Anorg. Allg. Chem., 619, p. 1347 Dahlhaus, J., Jutzi, P., Frenck, H.J., Kulisch, W., (1993) Adv. Mater., 5, p. 377 Flemish, J.R., Pfeffer, R.L., (1993) J. Appl. Phys., 74, p. 3277 Boudreau, M., Boumerzoug, M., Mascher, P., Jessop, P.E., (1993) Appl. Phys. Lett., 63, p. 3014 Ahn, J., Suzuki, K., (1994) Appl. Phys. Lett., 64, p. 3249 Glockling, F., (1969) The Chemistry of Ge, , Academic, London Johnson, W.C., Morey, G.H., Kott, A.E., (1932) J. Am. Chem. Soc., 54, p. 4278 Storr, R., Wright, A.N., Winkler, C.A., (1962) Can. J. Chem., 40, p. 1296 Johnson, W.C., (1930) J. Am. Chem. Soc., 52, p. 5160 Schwarz, R., Shenk, P.W., (1930) Chem. Ber., 63, p. 296 Juza, R., Hahn, H., (1939) Z. Anorg. Allg. Chem., 241, p. 32 Leslie, W., Carroll, K.G., Fisher, R.M., (1952) J. Met., 4, p. 204 Johnson, O., (1956) Usp. Khim., 25, p. 1 Juza, R., Hahn, H., (1940) Z. Anorg. Allg. Chem., 244, p. 124 Gritzenko, V.A., (1975) Prog. Surf. Sci., 28, p. 387 Young, A.B., Rosenberg, J.J., Szendro, I., (1987) J. Electrochem. Soc., 134, p. 2867 Pande, K.P., Shen, C.C., (1982) Appl. Phys. A: Solids Surf., 28, p. 123 Liu, A.Y., Cohen, M.L., (1989) Science, 245, p. 841 Cuomo, J.J., Leary, P.A., Yu, D., Reuter, W., Frisch, M., (1979) J. Vac. Sci. Technol., 16, p. 229 Torn, C.J., Silverstein, J.M., Judy, J.H., Chang, C., (1993) J. Mater. Res., 5, p. 2490 Chen, M.Y., Lin, D., Lin, X., David, V.P., Chung, Y.W., Wong, M.S., Sproul, W.D., (1993) J. Vac. Sci. Technol. A, 11, p. 521 Niu, C., Lu, Y.Z., Lieber, C.M., (1993) Science, 261, p. 335 Fujimoto, F., Ogata, K., (1993) Jpn. J. Appl. Phys., Part 2, 32, pp. L420 Yel, T.A., Lin, C.L., Silverstein, J.M., Judy, J.H., (1993) J. Magn. Magn. Mater., 120, p. 314 Kaufman, J.H., Metin, S., Saperstein, D.D., (1989) Phys. Rev. B, 39, p. 13053 Amir, O., Kalish, R., (1991) J. Appl. Phys., 70, p. 4958 Franceschini, D.F., Achete, C.A., Freire Jr., F.L., Mariotto, G., (1992) Novel Forms of Carbon, p. 481. , edited by C. L. Renschler, J. J. Pouch, and D. M. Cox MRS, Pittsburg, PA Mansour, A., Ugolini, D., (1993) Phys. Rev. B, 47, p. 10201 Seth, J., Padiyath, R., Babu, S.V., (1994) Diamond Relat. Mater., 3, p. 210 Franceschini, D.F., Achete, C.A., Freire Jr., F.L., (1992) Appl. Phys. Lett., 60, p. 3229 Freire Jr., F.L., Franceschini, D.F., Achete, C.A., (1995) Phys. Status Solidi B, 192, p. 493 Maya, L., (1993) J. Vac. Sci. Technol. A, 11, p. 604 Lima, R.S., Dionisio, P.H., Schreiner, W.H., (1991) Solid State Commun., 79, p. 395 Gordon, R.G., Hoffman, D.M., Riaz, U., (1992) Chem. Mater., 4, p. 68 Kieffer, R., Fister, D., Schoof, H., Mauer, K., (1973) Powder Metall., 5, p. 1 Kieffer, R., Ettmayer, P., (1974) High Temp.-High Press., 6, p. 253 Schintlmeister, W., Pacher, O., (1974) Metall., 28, p. 690 Powell, C.F., Oxley, J.H., Blocher Jr., J.M., (1966) Vapor Deposition, , Wiley, New York, Chap. 11 Takanashi, T., Itoh, H., (1977) J. Electrochem. Soc., 124, p. 797 Wakefield, G.F., Blocher Jr., J.M., Chemical Vapor Deposition (1975) 5th International Conference, p. 634. , Electrochemical Society, Pennington, NJ Rand, M.J., Roberts, J.F., (1968) J. Electrochem. Soc., 115, p. 423 Hirayama, M., Shohno, K., (1975) J. Electrochem. Soc., 122, p. 1671 Chu, T.L., Kelm Jr., R.W., (1975) J. Electrochem. Soc., 122, p. 995 Lewis, D.W., (1970) J. Electrochem. Soc., 117, p. 978 Kim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Ettenberg, N., Gilbert, S.L., (1973) J. Appl. Phys., 44, p. 292 Manasevit, H.M., Erdmann, F.M., Simpson, W.I., (1971) J. Electrochem. Soc., 118, p. 1864 Ilegems, N., (1970) J. Cryst. Growth, 13-14, p. 360 Chu, T.L., (1971) J. Electrochem. Soc., 118, p. 1200 Thompson, M.J., (1984) The Physics of Hydrogenated Amorphous Silicon I-Topics in Applied Physics, 55. , edited by J. D. Joannopoulos and G. Lucovsky Springer, New York, and references therein Brodie, I., Lament Jr., L.T., Myers, D.O., (1968) J. Vac. Sci. Technol., 6, p. 124 Anderson, D.A., Moddel, G., Paesler, M.A., Paul, W., (1979) J. Vac. Sci. Technol., 16, p. 906 Ross, R.C., Messier, R., (1981) J. Appl. Phys., 52, p. 5329 Moustakas, T.D., (1982) Sol. Energy Mater., 8, p. 187 Tardy, J., Meaudre, R., (1983) Philos. Mag. B, 48, p. 73 Marques, F.C., Chambouleyron, I., (1989) Proceedings of the 9th European Photovoltaic Solar Energy Conference, p. 1042. , edited by W. Palz, G. T. Wrixon, and P. Helm Kluwer Academic, Dordrecht Antoine, A., Drevillon, B., Roca, P., (1985) J. Non-Cryst. Solids, 77-78, p. 769 Karg, F.H., Bohm, H., Pierz, K., (1989) J. Non-Cryst. Solids, 114, p. 477 Turner, W.A., Jones, S.J., Pang, D., Bateman, B.F., Chen, J.H., Li, Y.M., Marques, F.C., Theye, M.L., (1990) J. Appl. Phys., 67, p. 7430 Vilcarromero, J., Marques, F.C., (1995) Phys. Status Solidi B, 192, p. 543 Street, R.A., (1991) Hydrogenated Amorphous Silicon, , Cambridge University Press, Cambridge, and references therein Paul, W., Anderson, D.A., (1981) Sol. Energy Mater., 5, p. 229 Moustakas, T.D., Maruska, H.P., Friedman, R., Hicks, M., (1983) Appl. Phys. Lett., 43, p. 368 Moustakas, T.D., Maruska, H.P., (1983) Appl. Phys. Lett., 43, p. 1037 Hardie, D., Jack, K.H., (1957) Nature (London), 180, p. 332 Grun, R., (1979) Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem., 35, p. 800 Robertson, J., (1981) Philos. Mag. B, 44, p. 215 Coleman, M.V., Thomas, D.J., (1968) Phys. Status Solidi, 25, p. 241 Aiyama, T., Fukunaga, T., Nihara, K., Hirai, T., Suzuki, K., (1979) J. Non-Cryst. Solids, 33, p. 131 Misawa, M., Fukunawa, T., Nihara, K., Hirai, T., Suzuki, K., (1979) J. Non-Cryst. Solids, 33, p. 135 Mobilio, S., Filipponi, A., (1987) J. Non-Cryst. Solids, 97-98, p. 365 Ruddlesden, S.N., Popper, P., (1958) Appl. Sci. Res., 11, p. 465 Boscherini, F., Filipponi, A., Pascarelli, S., Evangelisti, F., Mobilio, S., Marques, F.C., Chambouleyron, I., (1989) Phys. Rev. B, 39, p. 8364 Filipponi, A., Fiorini, P., Evangelisti, F., Mobilio, S., (1987) MRS Symposium Proceedings, 95, p. 305. , edited by A. Madan, M. Thompson, D. Adler, and Y. Hamakawa MRS, Pittsburgh, PA Robertson, J., (1991) Philos. Mag. B, 63, p. 47. , Note that in this paper the notation a-SiNx is used instead of a-Si1-xNx. A review of theoretical calculations on the electronic structure of a-Si1-xNx is found in this article Kärcher, R., Ley, L., Johnson, R.L., (1984) Phys. Rev. B, 30, p. 1896 Guraya, M.M., Ascolani, H., Zampieri, G., Dias Da Silva, J.H., Cantão, M.P., Cisneros, J.I., (1994) Phys. Rev. B, 49, p. 13446 Makler, S., Rocha, G.M., Anda, E.V., (1990) Phys. Rev. B, 41, p. 5857 Zanatta, A.R., Chambouleyron, I., (1996) Phys. Status Solidi B, 193, p. 399 Zanatta, A.R., Landers, R., De Castro, S.G.C., Kleiman, G.G., Chambouleyron, I., Grilli, M.L., (1995) Appl. Phys. Lett., 66, p. 1258 Comedi, D., Zanatta, A.R., Alvarez, F., Chambouleyron, I., (1996) J. Non-Cryst. Solids, 198-200, p. 136 Robertson, J., (1994) Philos. Mag. B, 69, p. 307 Warren, W.L., Kanicki, J., Robertson, J., Poindexter, E.H., McWhorter, P.J., (1993) J. Appl. Phys., 74, p. 4034 Chambouleyron, I., Marques, F.C., Cisneros, J.I., Alvarez, F., Moehlecke, S., Losch, W., Pereyra, I., (1985) J. Non-Cryst. Solids, 77-78, p. 1309 Honma, I., Kawai, H., Komiyama, H., Tanaka, K., (1989) J. Appl. Phys., 65, p. 1074 Brodsky, M.H., Title, R.S., (1969) Phys. Rev. Lett., 23, p. 581 Stutzmann, M., Stuke, J., Dersch, H., (1983) Phys. Status Solidi B, 105, p. 265 Chen, G., Zhang, F., Jia, W., Chen, W., (1989) Phys. Status Solidi A, 114, p. 1170 Yokomichi, H., (1995) Materials Science Forum, 196-201, p. 1291. , Trans. Tech. Publications, Switzerland Min, H., Ueda, S., Ishii, N., Kumada, M., Shimizu, T., (1996) J. Non-Cryst. Solids, 198-200, p. 375 Zanatta, A.R., Chambouleyron, I., (1992) Phys. Rev. B, 46, p. 2119 Zanatta, A.R., Chambouleyron, I., (1994) Braz. J. Phys., 24, p. 434 Zhou, J.-H., Yamaguchi, K., Yamamoto, Y., Shimizu, T., (1993) J. Appl. Phys., 74, p. 5086 Cardona, M., Ley, L., (1978) Photoemission in Solids I, General Principles, , edited by M. Cardona and L. Ley Springer, Berlin, Chap. 1 Honma, I., Kawai, H., Komiyama, H., Tanaka, K., (1986) Appl. Phys. Lett., 50, p. 276 Liu Chun, R., Sun Zhao, Q., Xu Jing, Z., Zheng, X., (1991) J. Phys. D, 24, p. 2215 Zanatta, A.R., Chambouleyron, I., Santos, P.V., (1996) J. Appl. Phys., 79, p. 433 Barrio, R.A., Carriço, A.S., Marques, F.C., Sanjurjo, J., Chambouleyron, I., (1989) J. Phys.: Condens. Matter, 1, p. 69 Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., Czubatyj, W., (1983) Phys. Rev. B, 28, p. 3234 Zanatta, A.R., Freire Jr., F.L., Chambouleyron, I., (1993) J. Phys.: Condens. Matter, 5, pp. A313 Smith, A.L., Angelotti, N.C., (1959) Spectrochem. Acta, 15, p. 412 Lucovsky, G., (1979) Solid State Commun., 29, p. 571 Rankin, D.W.H., J. Chem. Soc. A, 1926, p. 1969 Gridewell, C., Rankin, D.W.H., Robiette, A.G., J. Chem. Soc. A, 2935, p. 1970 Pauling, L., (1960) The Nature of the Chemical Bond, 3rd Ed., , Cornell University Press, New York Zanatta, A.R., Chambouleyron, I., (1995) Solid State Commun., 95, p. 270 Smith Jr., J.E., Brodsky, M.H., Crowder, B.L., Natham, M.I., Pinczuk, A., (1971) Phys. Rev. Lett., 26, p. 642 Lannin, J.S., (1987) J. Non-Cryst. Solids, 97-98, p. 39 Paul, W., Paul, D.K., Von Roedern, B., Blake, J., Oguz, S., (1981) Phys. Rev. Lett., 46, p. 1016 Marques, F.C., Lacerda, R.G., Lima, M.M., Jr, Vilcarromero, J., (1995) Phys. Status Solidi B, 192, p. 549 Sanderson, R.T., (1976) Chemical Bonds and Bond Energy, , Academic, New York, Chap. 2 Hasegawa, S., He, L., Inokuma, T., Kurata, K., (1992) Phys. Rev. B, 46, p. 12478 Ingo, G.M., Zacchetti, N., Della Sala, D., Coluzza, C., (1989) J. Vac. Sci. Technol. A, 7, p. 3048 Yin, Z., Smith, F.W., (1990) Phys. Rev. B, 42, p. 3658 Bolmont, D., Bischoff, J.L., Lutz, F., Kubler, L., (1991) Appl. Phys. Lett., 59, p. 2742 Wagner, C.D., (1975) Faraday Discuss. Chem. Soc., 60, p. 291 Wagner, C.D., (1978) Handbook of X-Ray and Ultraviolet Photoemission Spectroscopy, , edited by D. Briggs Heyden & Son Ltd., London Williams, A.R., Lang, N.D., (1978) Phys. Rev. Lett., 40, p. 954 Ley, L., Kärcher, R., Johnson, R.L., (1984) Phys. Rev. Lett., 53, p. 710 Urbach, F., (1953) Phys. Rev., 92, p. 1324 Curtins, H., Favre, M., (1988) Amorphous Silicon and Related Materials, p. 329. , edited by H. Fritzsche World Scientific, Singapore Tauc, J., Grigorovici, R., Vancu, A., (1966) Phys. Status Solidi, 15, p. 627 Tsu, R., Menna, P., Mahan, H., (1987) Sol. Cells, 21, p. 189 Hasegawa, S., Tsukao, T., Zalm, P.C., (1987) J. Appl. Phys., 61, p. 2916 Bell, F.G., Ley, L., (1988) Phys. Rev. B, 37, p. 8383 Kurik, M.V., (1971) Phys. Status Solidi A, 8, p. 9 Tiedje, T., Cebulka, J.M., Morel, D.L., Abeles, B., (1981) Phys. Rev. Lett., 46, p. 1425 Cody, G.D., Tiedje, T., Abeles, B., Brooks, B., Goldstein, Y., (1981) Phys. Rev. Lett., 47, p. 1480 Cody, G.D., (1984) Semiconductors and Semimetals, 21 B, p. 11. , edited by J. I. Pankove Academic, New York Mahan, A.H., Menna, P., Tsu, R., (1987) Appl. Phys. Lett., 51, p. 1167 Aljishi, S., Cohen, J.D., Jin, S., Ley, L., (1990) Phys. Rev. Lett., 64, p. 2811 Howard, J.A., Street, R.A., (1991) Phys. Rev. B, 44, p. 7935 Redfield, D., (1963) Phys. Rev. B, 130, p. 914 (1967) Phys. Rev. B, 140, p. 2056 Hopfield, J.J., (1968) Comments Solid State Phys., 1, p. 16 Dow, J.D., Redfield, D., (1970) Phys. Rev. B, 1, p. 3358 Sumi, H., Toyozawa, Y., (1972) J. Phys. Soc. Jpn., 31, p. 342 Dow, J.D., Redfield, D., (1972) Phys. Rev. B, 5, p. 594 Skettrup, J., (1978) Phys. Rev. B, 18, p. 2622 Abe, S., Toyozawa, Y., (1981) J. Phys. Soc. Jpn., 50, p. 2185 Schreiber, M., Toyozawa, Y., (1982) J. Phys. Soc. Jpn., 51, p. 1528 (1982) J. Phys. Soc. Jpn., 51, p. 1537 (1982) J. Phys. Soc. Jpn., 51, p. 1544 Singh, J., Madhukar, A., (1982) Solid State Commun., 41, p. 241 Redfield, D., (1982) Solid State Commun., 44, p. 1347 Soukoulis, C.M., Cohen, M.H., Economou, E., (1984) Phys. Rev. Lett., 53, p. 616 John, S., Soukoulis, C.M., Cohen, M.H., Economou, E., (1986) Phys. Rev. Lett., 57, p. 1777 Bar-Yam, Y., Adler, D., Joannopoulos, J.D., (1986) Phys. Rev. Lett., 57, p. 467 Smith, Z.E., Wagner, S., (1987) Phys. Rev. Lett., 59, p. 688 Chan, C.T., Louie, S.G., Phillips, J.C., (1987) Phys. Rev. B, 35, p. 2744 Silver, M., Pautmeier, L., Bassler, H., (1989) Solid State Commun., 72, p. 177 John, S., Grein, C.H., (1990) Rev. Solid State Sci., 4, p. 1 Branz, H.M., Silver, M., (1990) Phys. Rev. B, 42, p. 7420 Kemp, M., Silver, M., (1993) Appl. Phys. Lett., 62, p. 1487 Frova, A., Selloni, A., (1985) Tetrahedrally Bonded Amorphous Semiconductors, p. 271. , edited by D. Adler and H. Fritzche Plenum, New York Skumanich, A., Frova, A., Amer, N.M., (1985) Solid State Commun., 54, p. 597 Zanatta, A.R., Chambouleyron, I., (1996) Phys. Rev. B, 53, p. 3833 Jackson, W.B., Kelso, S.M., Tsai, C.C., Allen, J.W., Oh, S.J., (1985) Phys. Rev. B, 31, p. 5187 Zanatta, A.R., Mulato, M., Chambouleyron, I., unpublishedBrodsky, M.H., (1975) Light Scattering in Solids, 8, p. 208. , edited by M. Cardona, Topics in Applied Physics Springer, Berlin Wakag, M., Ogana, K., Nakano, A., (1994) Phys. Rev. B, 50, p. 10666 Morell, J., Katiyar, R.S., Weisz, S.Z., Jia, H., Shinar, J., Balberg, I., (1995) J. Appl. Phys., 78, p. 5120 Bustarret, E., Morgado, E., (1987) Solid State Commun., 63, p. 581 Bustarret, E., Vaillant, F., Hepp, B., (1988) Mater. Res. Soc. Symp. Proc., 118, p. 123 Schubert, M.B., Mohring, H.D., Lotter, E., Bauer, G.H., (1989) IEEE Trans. Electron Devices, 36, p. 2863 Yashiro, T., (1972) J. Electrochem. Soc., 119, p. 781 Marques, F.C., (1989), PhD thesis, UNICAMP, Brazil, April (unpublished)Marques, F.C., Chambouleyron, I., (1991) MRS Symposia Proceedings, 209, p. 555. , Defects in Materials, edited by P. D. Bristowe, J. E. Epperson, J. E. Griffith, and Z. Lilienthal-Weber Materials Research Society, Pittsburgh Takano, Y., Sato, T., Kitaoka, N., Ozaki, H., (1983) J. Non-Cryst. Solids, 55, p. 325 Paul, W., Jones, S.J., Turner, W.A., (1991) Philos. Mag. B, 63, p. 247 Bagratishvili, G.D., Berozashvili, Yu.N., Dzhanelidze, M.B., Dzhanelidze, R.B., (1987) Sov. Phys. Dokl., 32, p. 652 Mott, N.F., (1967) Adv. Phys., 16, p. 49 Knotek, M.L., Pollak, M., Donovan, T.M., Kurtzman, H., (1973) Phys. Rev. Lett., 30, p. 835 Bagratishvili, G.D., Berozashvili, Yu.N., Dzhanelidze, M.B., Dzhanelidze, R.B., (1990) Sov. Phys. Semicond., 24, p. 618 Kohn, W., (1957) Solid State Physics, 5. , edited by F. Seitz and D. Turnbull Academic, New York (1992) The Properties of Natural and Synthetic Diamond, , edited by J. E. Field Academic, London Yatsurugi, Y., Akiyama, N., Endo, Y., Nozaki, T., (1973) J. Electrochem. Soc., B120, p. 975 Pavlov, P.V., Zorin, E.I., Tetelbaum, D.I., Khokhlov, A.F., (1976) Phys. Status Solidi A, 35, p. 11 Zorin, E.I., Pavlov, P.V., Telel'baum, D.I., (1968) Sov. Phys. Semicond., 2, p. 11 Campbell, A.B., Mitchell, J.B., Schewchun, J., Thompson, D.A., Davies, J.A., (1975) Can. J. Phys., 53, p. 303 Brower, K.L., (1982) Phys. Rev. B, 26, p. 6040 Stein, H.J., (1986) MRS Symposia Proceedings, 59, p. 523. , Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook Materials Research Society, Pittsburgh, PA Berg Rasmussen, F., Jones, R., Öberg, S., (1994) Phys. Rev. B, 50, p. 4378 Ammerlaan, C.A., (1980) Proceeding 59, p. 81. , Defects and Radiation Effects in Semiconductors, edited by R. R. Hasiguti Institute of Physics, London DeLeo, G.G., Fowler, W.B., Watkins, G.D., (1984) Phys. Rev. B, 29, p. 3193 Pantelides, S.T., (1974) Solid State Commun., 14, p. 1255 Schultz, P.A., Messmer, R.P., (1986) Phys. Rev. B, 34, p. 2532 Spear, W., LeComber, P., (1975) Solid State Commun., 17, p. 1193 (1976) Philos. Mag., 33, p. 935 Robertson, J., (1979) Philos. Mag., 40, p. 31 Street, R.A., (1982) Phys. Rev. Lett., 49, p. 1187 Phillips, J.C., (1979) Phys. Rev. Lett., 42, p. 1151 Robertson, J., Powell, M.J., (1984) Appl. Phys. Lett., 44, p. 415 Shimizu, T., Kidoh, H., Morimoto, A., Kumeda, M., (1989) Jpn. J. Appl. Phys., Part 1, 28, p. 586 Chambouleyron, I., Zanatta, A.R., (1993) Appl. Phys. Lett., 62, p. 58 Chambouleyron, I., Campomanes, R., (1996) Phys. Rev. B, 53, p. 12566 Zanatta, A.R., (1995), PhD thesis, Unicamp, May (unpublished)Campomanes, R., (1994), MSc dissertation, Unicamp, September (unpublished)Drüsedau, T., Schröder, B., Oechsner, H., (1991) Solid State Commun., 79, p. 799 Drüsedau, T., (1991) J. Non-Cryst. Solids, 137-138, p. 821 Baixeras, J., Mencaraglia, D., Andro, P., (1978) Philos. Mag. B, 37, p. 403 Watanabe, H., Katoh, K., Yasui, M., (1983) Thin Solid Films, 106, p. 263 Dunnett, B., Jones, D.I., Stewart, A.D., (1986) Philos. Mag. B, 53, p. 159 Tsu, D.V., Lucovsky, G., Mantini, M.J., (1986) Phys. Rev. B, 33, p. 7069 Lucovsky, G., Williams, M.J., He, S.S., Cho, S.M., Jing, Z., Whitten, J.L., (1994) MRS Symposia Proceedings, 336, p. 637. , edited by E. Schiff, M. Hack, A. Madan, M. Powell, and A. Matsuda Materials Research Society, Pittsburgh Venezuela, P.P.M., Fazzio, A., (1996) Phys. Rev. Lett., 77, p. 546 Marcano, G., Zanatta, A.R., Chambouleyron, I., (1994) J. Appl. Phys., 75, p. 4662 Masuda, A., Itoh, K., Kumeda, M., Shimizu, T., (1996) J. Non-Cryst. Solids, 198-200, p. 395 Reichardt, J., Johnson, R.L., Ley, L., (1983) Physica B & C, 117-118, p. 877 Hasegawa, S., Tsukao, T., Zalm, P.C., (1987) J. Appl. Phys., 61, p. 2916 Hollinger, G., Himpsel, F.J., (1984) Appl. Phys. Lett., 44, p. 93 Gruntz, K.J., Ley, L., Johnson, R.L., (1981) Phys. Rev. B, 24, p. 2069 Patella, F., Sette, F., Perfetti, P., Quaresima, C., Capasso, C., Capozi, M., Savoia, A., Evangelisti, F., (1984) Solid State Commun., 49, p. 749 Schmeisser, D., Schnell, R.D., Bogen, A., Himpsel, F.G., Rieger, D., Landgren, G., Morar, J.F., (1986) Surf. Sci., 172, p. 455 Riedel, R.A., Turowski, M., Margaritondo, G., (1984) J. Appl. Phys., 55, p. 3195 Hasegawa, S., Matsuda, M., Kurata, Y., (1991) Appl. Phys. Lett., 58, p. 741 Hasegawa, S., Mutuura, M., Kurata, Y., (1986) Appl. Phys. Lett., 49, p. 1272 Vilcarromero, J., Marques, F.C., private communicationStreet, R.A., Biegelsen, D.K., Jackson, W.B., Johnson, N.M., Stutzmann, M., (1985) Philos. Mag. B, 52, p. 235 Marimoto, A., Matsumoto, M., Yoshita, M., Kumeda, M., Shimizu, T., (1991) Appl. Phys. Lett., 59, p. 2130 Mitchell, J.B., Shewchun, J., Thompson, D.A., (1975) J. Appl. Phys., 46, p. 335 Karashev, T.B., Aranovich, R.M., Vaino, A.A., Tali, A.A., (1970) Radiation Physics of Nonmetallic Crystals, p. 174. , edited by N. N. Sirota Nauka i Tekhnika, Minsk, (in Russian)