dc.creatorDe Souza Campos F.
dc.creatorUlson J.A.C.
dc.creatorSwart J.W.
dc.creatorDeen M.J.
dc.creatorMarinov O.
dc.creatorKaram D.
dc.date2013
dc.date2015-06-25T19:13:36Z
dc.date2015-11-26T15:11:10Z
dc.date2015-06-25T19:13:36Z
dc.date2015-11-26T15:11:10Z
dc.date.accessioned2018-03-28T22:21:16Z
dc.date.available2018-03-28T22:21:16Z
dc.identifier
dc.identifierChip In Curitiba 2013 - Sbcci 2013: 26th Symposium On Integrated Circuits And Systems Design. Ieee Computer Society, v. , n. , p. - , 2013.
dc.identifier
dc.identifier10.1109/SBCCI.2013.6644859
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84897405952&partnerID=40&md5=79b72726a2d540de0faa23f82c0c9800
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/88904
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/88904
dc.identifier2-s2.0-84897405952
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1258071
dc.descriptionImage sensors in standard CMOS technology are increasing used for consumer, industrial and scientific applications due to their low cost, high level of integration and low power consumption. Further, image sensors in mainstream complementary metal-oxide-semiconductor (CMOS) technology are preferred because they are the lowest cost and easiest/fastest option to implement. For CMOS image sensors, a key issue is their noise behavior. Therefore, we have studied the noise characteristics of CMOS image sensors operating in time domain. Two important noise sources are the reset noise and integration noise. The reset noise is due to the reset in CMOS image sensors operating in voltage domain. The integration noise is that accumulated during light integration and was found to be the constant, independent of light intensity. Our circuit analysis shows that the signal-to-noise ratio (SNR) is also constant and independent of light intensity. At low light levels the constant SNR is higher compared to others CMOS image sensors presented in the literature. We have implemented a time domain CMOS image sensor in AMS CMOS 0.35um technology. Our measurements results show that the SNR level is approximately constant to 43dB. © 2013 IEEE.
dc.description
dc.description
dc.description
dc.description
dc.descriptionACM SigDA,Brazilian Computer Society (SBC),Brazilian Microelectronics Society (SBMICRO),et al.,IEEE Circuits and Systems Society (CAS),SBU
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dc.languageen
dc.publisherIEEE Computer Society
dc.relationChip in Curitiba 2013 - SBCCI 2013: 26th Symposium on Integrated Circuits and Systems Design
dc.rightsfechado
dc.sourceScopus
dc.titleTemporal Noise Analysis And Measurements Of Cmos Active Pixel Sensor Operating In Time Domain
dc.typeActas de congresos


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