Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Effects of annealing time on memory characteristics of Ge nanoparticles (NPs) as floating gate of metal-oxide-semiconductor (MOS) structure are investigated in this work. First, Ge NPs at 8.5 nm-near to Si/SiO2 interface were obtained by Low Pressure Chemical Vapor Deposition (LPCVD). The morphology and dimension of these NPs was estimated by the statistic treatment of Atomic Force Microscopy images, which exhibited an homogeneous distribution of NPs over SiO2, with a main diameter of (6.72±1.97) nm and NPs-density of 1.5×1012 cm-2. For the characterization of memory properties, high-frequency Capacitive-Voltage measurements as function of annealing time were performed on the MOS structure containing these Ge NPs. The results showed a memory window of 11.92 V with an electrical charge storage density of 6.61×1012 cm-2. The Current-Voltage measurement showed a Fowler-Nordheim tunneling as the conduction mechanism of our device. CAPES; Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Diaz, R., Functional nanoclystal-based memories with extraction of nanocrystals properties by charge pumping technique (2013) Solid-State Electronics, 82, pp. 11-15Mao, L.-F., Quantum coupling effects on charging dynamics of nanoclystalline memory devices (2014) Microelectronics Reliability, 54 (2), pp. 404-409Mederos, M., Doi, I., Diniz, J.A., Structural and electrical properties of Ge nanoparticles grown by LPCVD for MOS-structures (2013) Microelectronics Technology and Devices (SBMicro), 2013 Symposium on, pp. 2-6Li, B., Liu, J., Nonvolatile memo/y with Ge/Si heteronanocrystals as floating gate (2011) Nanotechnology, IEEE Transactions on, 10 (2), pp. 284-290Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbé, E.F., Chan, K., A silicon nanoclystals based memory (1996) Applied Physics Letters, 68 (10), pp. 1377-1379Ray, S., Nanocrystals for silicon-based light-emitting and memory devices (2013) Journal of Physics D: Applied Physics, 46 (15), p. 153001Horváth, Z.J., Effect of location of Si or Ge nanoClystals on the memory behavior of MNOS structures (2013) Physica E: Low-dimensional Systems and Nanostructures, 51, pp. 104-110Aluguri, R., Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si (2013) Current Applied Physics, 13 (1), pp. 12-17Bonafos, C., Si and Ge nanocrystals for future memory devices (2012) Materials Science in Semiconductor Processing, 15 (6), pp. 615-626Chakraborty, G., Study of the relative pelformance of silicon and germanium nanoparticles embedded gate oxide in metal-oxidesemiconductor memory devices (2011) Journal of Applied Physics, 109 (6), p. 064504Bag, A., Aluguri, R., Ray, S., Germanium nanocrystals embedded in silicon dioxide forjloating gate memory devices (2011) J. Nano. Electron. Phys., 3 (1), pp. 878-883Li, B., High-performance hetero-nanocrystal memories (2008) 9th International Conference on Solid-State and Integrated-Circuit Technology, pp. 947-950Baron, T., Pelissier, B., Perniola, L., Mazen, F., Hartmann, J.-M., Rolland, G., Chemical vapor deposition of Ge nanoclystals on sial (2003) Applied Physics Letters, 83 (7), pp. 1444-1446Miyazaki, S., Hamamoto, Y., Yoshida, E., Ikeda, M., Hirose, M., Control of seif-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition (2000) Thin Solid Films, 369 (1), pp. 55-59Kanoun, M., Busseret, C., Poncet, A., Souifi, A., Baron, T., Gautier, E., Electronic properties of Ge nanocrystals for non volatile memory applications (2006) Solid-State Electronics, 50 (7), pp. 1310-1314Vieira, E.M., Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix (2013) The European Physical Journal B, 86 (7), pp. 1-7Chakraborty, G., Sengupta, A., Requejo, F.G., Sarkar, C.K., Study of the relative peiformance of silicon and germanium nanoparticles embedded gate oxide in metal-oxide-semiconductor memory devices (2011) Journal of Applied Physics, 109 (6), pp. 064504-064506