dc.creator | Cesar R.R. | |
dc.creator | Barros A.D. | |
dc.creator | Doi I. | |
dc.creator | Diniz J.A. | |
dc.creator | Swart J.W. | |
dc.date | 2014 | |
dc.date | 2015-06-25T17:57:18Z | |
dc.date | 2015-11-26T14:50:57Z | |
dc.date | 2015-06-25T17:57:18Z | |
dc.date | 2015-11-26T14:50:57Z | |
dc.date.accessioned | 2018-03-28T22:02:22Z | |
dc.date.available | 2018-03-28T22:02:22Z | |
dc.identifier | 9781479946969 | |
dc.identifier | 2014 29th Symposium On Microelectronics Technology And Devices: Chip In Aracaju, Sbmicro 2014. Institute Of Electrical And Electronics Engineers Inc., v. , n. , p. - , 2014. | |
dc.identifier | | |
dc.identifier | 10.1109/SBMicro.2014.6940127 | |
dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-84912084323&partnerID=40&md5=715da40f843c9da4d6514d009c8fcf02 | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/87231 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/87231 | |
dc.identifier | 2-s2.0-84912084323 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1254327 | |
dc.description | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
dc.description | This work presents a device for pH measurements called Electrolyte-Insulator-Semiconductor (EIS), which operates as a Metal-Oxide-Semiconductor capacitor but instead of having the metal contact electrode, an electrolyte solution and a reference electrode are used to apply voltage. It was used TiO2 thin film as insulator and sensitive membrane. These films were obtained after rapid thermal oxidation of Ti thin films deposited by sputtering. They were structurally characterized by Raman and ellipsometry which reveal that the films present rutile crystal structure. We use capacitors to make the electrical characterization of TiO2 films in order to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. EIS devices are tested through capacitance x voltage (CxV) measurements using different pH solutions. When in contact to the dielectric film, each pH value adds a contribution to the flat band voltage, resulting in a displacement of the CxV curve. It was possible to determine from the flat band voltage (VFB), the sensitivity of 41 mV/pH. | |
dc.description | | |
dc.description | | |
dc.description | | |
dc.description | | |
dc.description | CAPES; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior | |
dc.description | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
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dc.description | Barros, A.D., (2013) Developement of TiO, and ZnO Thin Films for ISFET and SAW Devices, , PhD Thesis, School of Electrical and Compuer Engineering, University of Campinas | |
dc.description | Abouzar, M.H., (2005) Label-free Detection of Charged Macromolecules Using A Field-effect-based Biosensor, , PhD Thesis, Aachen University of Applied Sciences Campus Julich Department of Applied Sciences and Technology, November | |
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dc.description | Lai, C.-S., Lu, T.-F., Yang, C.-M., Lin, Y.-C., Pijanowska, D.G., Jaroszewicz, B., Body effect minimization using single layer structure for pH-ISFET applications (2010) Sensors Actuators B Chern., 143 (2), pp. 494-499. , Jan | |
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dc.description | Kim, S., Brown, S.L., Rossnagel, S.M., Bruley, J., Copel, M., Hopstaken, M.J.P., Narayanan, V., Frank, M.M., Oxygen migration in TiO[sub 2]-based higher-k gate stacks (2010) J. Appl. Phys., 107 (5), p. 054102 | |
dc.language | en | |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
dc.relation | 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014 | |
dc.rights | fechado | |
dc.source | Scopus | |
dc.title | Electrolyte-insulator-semiconductor Field Effect Device For Ph Detecting | |
dc.type | Actas de congresos | |