dc.creatorCesar R.R.
dc.creatorBarros A.D.
dc.creatorDoi I.
dc.creatorDiniz J.A.
dc.creatorSwart J.W.
dc.date2014
dc.date2015-06-25T17:57:18Z
dc.date2015-11-26T14:50:57Z
dc.date2015-06-25T17:57:18Z
dc.date2015-11-26T14:50:57Z
dc.date.accessioned2018-03-28T22:02:22Z
dc.date.available2018-03-28T22:02:22Z
dc.identifier9781479946969
dc.identifier2014 29th Symposium On Microelectronics Technology And Devices: Chip In Aracaju, Sbmicro 2014. Institute Of Electrical And Electronics Engineers Inc., v. , n. , p. - , 2014.
dc.identifier
dc.identifier10.1109/SBMicro.2014.6940127
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84912084323&partnerID=40&md5=715da40f843c9da4d6514d009c8fcf02
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/87231
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/87231
dc.identifier2-s2.0-84912084323
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1254327
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionThis work presents a device for pH measurements called Electrolyte-Insulator-Semiconductor (EIS), which operates as a Metal-Oxide-Semiconductor capacitor but instead of having the metal contact electrode, an electrolyte solution and a reference electrode are used to apply voltage. It was used TiO2 thin film as insulator and sensitive membrane. These films were obtained after rapid thermal oxidation of Ti thin films deposited by sputtering. They were structurally characterized by Raman and ellipsometry which reveal that the films present rutile crystal structure. We use capacitors to make the electrical characterization of TiO2 films in order to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. EIS devices are tested through capacitance x voltage (CxV) measurements using different pH solutions. When in contact to the dielectric film, each pH value adds a contribution to the flat band voltage, resulting in a displacement of the CxV curve. It was possible to determine from the flat band voltage (VFB), the sensitivity of 41 mV/pH.
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dc.descriptionCAPES; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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dc.descriptionKim, S., Brown, S.L., Rossnagel, S.M., Bruley, J., Copel, M., Hopstaken, M.J.P., Narayanan, V., Frank, M.M., Oxygen migration in TiO[sub 2]-based higher-k gate stacks (2010) J. Appl. Phys., 107 (5), p. 054102
dc.languageen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsfechado
dc.sourceScopus
dc.titleElectrolyte-insulator-semiconductor Field Effect Device For Ph Detecting
dc.typeActas de congresos


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