Sketched Oxide Single-electron Transistor

dc.creatorCheng G.
dc.creatorSiles P.F.
dc.creatorBi F.
dc.creatorCen C.
dc.creatorBogorin D.F.
dc.creatorBark C.W.
dc.creatorFolkman C.M.
dc.creatorPark J.-W.
dc.creatorEom C.-B.
dc.creatorMedeiros-Ribeiro G.
dc.creatorLevy J.
dc.date2011
dc.date2015-06-30T20:21:12Z
dc.date2015-11-26T14:48:22Z
dc.date2015-06-30T20:21:12Z
dc.date2015-11-26T14:48:22Z
dc.date.accessioned2018-03-28T21:59:08Z
dc.date.available2018-03-28T21:59:08Z
dc.identifier
dc.identifierNature Nanotechnology. , v. 6, n. 6, p. 343 - 347, 2011.
dc.identifier17483387
dc.identifier10.1038/nnano.2011.56
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-79960125201&partnerID=40&md5=0d73bbf895a78ca83360e173541dd75b
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/107657
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/107657
dc.identifier2-s2.0-79960125201
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1253586
dc.descriptionDevices that confine and process single electrons represent an important scaling limit of electronics1,2. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties3-5. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides6-8. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.
dc.description6
dc.description6
dc.description343
dc.description347
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dc.languageen
dc.publisher
dc.relationNature Nanotechnology
dc.rightsfechado
dc.sourceScopus
dc.titleSketched Oxide Single-electron Transistor
dc.typeArtículos de revistas


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