dc.creatorComedi D.
dc.creatorDondeo F.
dc.creatorChambouleyron I.
dc.creatorPeng Z.L.
dc.creatorMascher P.
dc.date2000
dc.date2015-06-30T19:52:20Z
dc.date2015-11-26T14:47:34Z
dc.date2015-06-30T19:52:20Z
dc.date2015-11-26T14:47:34Z
dc.date.accessioned2018-03-28T21:58:05Z
dc.date.available2018-03-28T21:58:05Z
dc.identifier
dc.identifierJournal Of Non-crystalline Solids. , v. 266-269 B, n. , p. 713 - 716, 2000.
dc.identifier223093
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0009010499&partnerID=40&md5=ea4d5d805c2b9c49af58b77b610ed242
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/107420
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/107420
dc.identifier2-s2.0-0009010499
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1253337
dc.descriptionWe explore reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge:H films. It is shown that compact a-Ge:H films can be obtained by IBSD at substrate temperatures between 180°C and 220°C by minimizing the ion bombardment of the growth surface. The infrared (IR) spectra of the best materials, as far as device applications are concerned, so-far obtained show no poly-hydride nor surface-like contributions to the Ge-H dipole vibration bands. Positron annihilation (PA) spectroscopy studies of these samples reveal smaller valence (S) parameters and larger core (W) parameters as compared with the films grown under less-favorable conditions, which indicate a relatively smaller concentration of the largest voids, the annihilation process being controlled mainly by trapping at small vacancy clusters or monovacancies. Similar IR and PA measurements on in situ ion-bombarded IBSD and RF-sputtered samples indicate that ion irradiation is a main factor in large void formation. © 2000 Elsevier Science B. V. All rights reserved.
dc.description266-269 B
dc.description
dc.description713
dc.description716
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dc.languageen
dc.publisher
dc.relationJournal of Non-Crystalline Solids
dc.rightsfechado
dc.sourceScopus
dc.titleCompact Hydrogenated Amorphous Germanium Films By Ion-beam Sputtering Deposition
dc.typeArtículos de revistas


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