dc.creator | Comedi D. | |
dc.creator | Dondeo F. | |
dc.creator | Chambouleyron I. | |
dc.creator | Peng Z.L. | |
dc.creator | Mascher P. | |
dc.date | 2000 | |
dc.date | 2015-06-30T19:52:20Z | |
dc.date | 2015-11-26T14:47:34Z | |
dc.date | 2015-06-30T19:52:20Z | |
dc.date | 2015-11-26T14:47:34Z | |
dc.date.accessioned | 2018-03-28T21:58:05Z | |
dc.date.available | 2018-03-28T21:58:05Z | |
dc.identifier | | |
dc.identifier | Journal Of Non-crystalline Solids. , v. 266-269 B, n. , p. 713 - 716, 2000. | |
dc.identifier | 223093 | |
dc.identifier | | |
dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-0009010499&partnerID=40&md5=ea4d5d805c2b9c49af58b77b610ed242 | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/107420 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/107420 | |
dc.identifier | 2-s2.0-0009010499 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1253337 | |
dc.description | We explore reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge:H films. It is shown that compact a-Ge:H films can be obtained by IBSD at substrate temperatures between 180°C and 220°C by minimizing the ion bombardment of the growth surface. The infrared (IR) spectra of the best materials, as far as device applications are concerned, so-far obtained show no poly-hydride nor surface-like contributions to the Ge-H dipole vibration bands. Positron annihilation (PA) spectroscopy studies of these samples reveal smaller valence (S) parameters and larger core (W) parameters as compared with the films grown under less-favorable conditions, which indicate a relatively smaller concentration of the largest voids, the annihilation process being controlled mainly by trapping at small vacancy clusters or monovacancies. Similar IR and PA measurements on in situ ion-bombarded IBSD and RF-sputtered samples indicate that ion irradiation is a main factor in large void formation. © 2000 Elsevier Science B. V. All rights reserved. | |
dc.description | 266-269 B | |
dc.description | | |
dc.description | 713 | |
dc.description | 716 | |
dc.description | Karg, F.H., Böhm, H., Pierz, K., (1989) J. Non-Cryst. Solids, 114, p. 477 | |
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dc.description | Marques, F.C., Chambouleyron, I., (1989) Proceedings of the Nineth ec Solar Energy Conference, p. 1042. , W. Palz, G.T. Wrixon, P. Helm (Eds.), Kluwer, Dordrecht | |
dc.description | Drüsedau, T., Schröder, B., (1994) J. Appl. Phys., 75, p. 2864 | |
dc.description | Peng, Z.L., Comedi, D., Dondeo, F., Chambouleyron, I., Simpson, P.J., Mascher, P., (1999) Physica B, 274, p. 579 | |
dc.description | Biersack, J.P., Haggmark, L.G., (1980) Nucl. Instrum, and Meth., 174, p. 257 | |
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dc.description | Origo, F., Hammer, P., Comedi, D., Chambouleyron, I., (1998) Mater. Res. Soc. Symp. Proc., 507, p. 477 | |
dc.description | Bhan, M.K., Malhotra, L.K., Kashyap, S.C., (1989) J. Appl. Phys., 65, p. 241 | |
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dc.description | Saarinen, K., Laine, T., Skog, K., Mäkinen, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Pessa, M., (1996) Phys. Rev. Lett., 77, p. 3407 | |
dc.language | en | |
dc.publisher | | |
dc.relation | Journal of Non-Crystalline Solids | |
dc.rights | fechado | |
dc.source | Scopus | |
dc.title | Compact Hydrogenated Amorphous Germanium Films By Ion-beam Sputtering Deposition | |
dc.type | Artículos de revistas | |